Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moiré Superlattice

Xiangyan Han, Qianling Liu, Yijie Wang, Ruirui Niu, Zhuangzhuang Qu, Zhiyu Wang, Zhuoxian Li, Chunrui Han, Kenji Watanabe, Takashi Taniguchi, Zhida Song, Jianpeng Liu, Jinhai Mao, Zheng Han, Bheema Lingam Chittari, Jeil Jung, Zizhao Gan, Jianming Lu

Research output: Contribution to journalArticlepeer-review

Abstract

Moiré superlattices have become a fertile playground for topological Chern insulators, where the displacement field can tune the quantum geometry and Chern number of the topological band. However, in experiments, displacement field engineering of spontaneous symmetry-breaking Chern bands has not been demonstrated. Here in a rhombohedral trilayer graphene moiré superlattice, we use a thermodynamic probe and transport measurement to monitor the Chern number evolution as a function of the displacement field. At a quarter filling of the moiré band, a novel Chern number of three is unveiled to compete with the well-established number of two upon turning on the electric field and survives when the displacement field is sufficiently strong. The transition can be reconciled by a nematic instability on the Fermi surface due to the pseudomagnetic vector field potentials associated with moiré strain patterns. Our work opens more opportunities to active control of Chern numbers in van der Waals moiré systems.

Original languageEnglish
Pages (from-to)6286-6295
Number of pages10
JournalNano Letters
Volume24
Issue number21
DOIs
StatePublished - 29 May 2024

Keywords

  • chemical potential
  • Chern insulator
  • electric field driven topological transition
  • moiré superlattice
  • rhombohedral trilayer graphene

Fingerprint

Dive into the research topics of 'Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moiré Superlattice'. Together they form a unique fingerprint.

Cite this