Enhanced mobility of new thieno [3,2] thienophen oligomer TFTs with Al 2O3 gate dielectrics

Lee Mi Do; Kyu Ha Baek; Ki Chul Song; Sun Jin Yun; Yuong Suk Yang; Eunhee Lim; Hong Ku Shim

Enhanced mobility of new thieno [3,2] thienophen oligomer TFTs with Al ₂O₃ gate dielectrics

Lee Mi Do, Kyu Ha Baek, Ki Chul Song, Sun Jin Yun, Yuong Suk Yang, Eunhee Lim, Hong Ku Shim

Department of Applied Chemistry

Research output: Contribution to conference › Paper › peer-review

Abstract

The organic thin field-effect transistor (OTFT) with new 2,5-bis-(50-hexyl-[2,20]bithiophenyl-5-yl)-thieno[3, 2-b]thiophene (T2TT) were examined with various gate dielectrics. The mobility of T2TT semiconductior material strongly depends on interface and insulator properties. The Al ₂O₃ gate insulator which prepared low temperature plasma enhanced atomic layer deposition (PEALD) method is better performance than silicon oxide insulator.

Original language	English
Pages	1517-1518
Number of pages	2
State	Published - 2006
Event	13th International Display Workshops, IDW '06 - Otsu, Japan Duration: 6 Dec 2006 → 6 Dec 2006

Conference

Conference	13th International Display Workshops, IDW '06
Country/Territory	Japan
City	Otsu
Period	6/12/06 → 6/12/06

Cite this

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title = "Enhanced mobility of new thieno [3,2] thienophen oligomer TFTs with Al 2O3 gate dielectrics",

abstract = "The organic thin field-effect transistor (OTFT) with new 2,5-bis-(50-hexyl-[2,20]bithiophenyl-5-yl)-thieno[3, 2-b]thiophene (T2TT) were examined with various gate dielectrics. The mobility of T2TT semiconductior material strongly depends on interface and insulator properties. The Al 2O3 gate insulator which prepared low temperature plasma enhanced atomic layer deposition (PEALD) method is better performance than silicon oxide insulator.",

author = "Do, {Lee Mi} and Baek, {Kyu Ha} and Song, {Ki Chul} and Yun, {Sun Jin} and Yang, {Yuong Suk} and Eunhee Lim and Shim, {Hong Ku}",

year = "2006",

language = "English",

pages = "1517--1518",

note = "13th International Display Workshops, IDW '06 ; Conference date: 06-12-2006 Through 06-12-2006",

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TY - CONF

T1 - Enhanced mobility of new thieno [3,2] thienophen oligomer TFTs with Al 2O3 gate dielectrics

AU - Do, Lee Mi

AU - Baek, Kyu Ha

AU - Song, Ki Chul

AU - Yun, Sun Jin

AU - Yang, Yuong Suk

AU - Lim, Eunhee

AU - Shim, Hong Ku

PY - 2006

Y1 - 2006

N2 - The organic thin field-effect transistor (OTFT) with new 2,5-bis-(50-hexyl-[2,20]bithiophenyl-5-yl)-thieno[3, 2-b]thiophene (T2TT) were examined with various gate dielectrics. The mobility of T2TT semiconductior material strongly depends on interface and insulator properties. The Al 2O3 gate insulator which prepared low temperature plasma enhanced atomic layer deposition (PEALD) method is better performance than silicon oxide insulator.

AB - The organic thin field-effect transistor (OTFT) with new 2,5-bis-(50-hexyl-[2,20]bithiophenyl-5-yl)-thieno[3, 2-b]thiophene (T2TT) were examined with various gate dielectrics. The mobility of T2TT semiconductior material strongly depends on interface and insulator properties. The Al 2O3 gate insulator which prepared low temperature plasma enhanced atomic layer deposition (PEALD) method is better performance than silicon oxide insulator.

UR - http://www.scopus.com/inward/record.url?scp=57649233396&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:57649233396

SP - 1517

EP - 1518

T2 - 13th International Display Workshops, IDW '06

Y2 - 6 December 2006 through 6 December 2006

ER -

Enhanced mobility of new thieno [3,2] thienophen oligomer TFTs with Al ₂O₃ gate dielectrics

Abstract

Conference

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