Enhanced switching ratio of sol-gel-processed Y2O3RRAM device by suppressing oxygen vacancy formation at high annealing temperatures

Kyoungdu Kim; Changmin Lee; Won Yong Lee; Do Won Kim; Hyeon Joong Kim; Sin Hyung Lee; Jin Hyuk Bae; In Man Kang; Jaewon Jang

doi:10.1088/1361-6641/ac3dd3

Enhanced switching ratio of sol-gel-processed Y₂O₃RRAM device by suppressing oxygen vacancy formation at high annealing temperatures

Kyoungdu Kim, Changmin Lee, Won Yong Lee, Do Won Kim, Hyeon Joong Kim, Sin Hyung Lee, Jin Hyuk Bae, In Man Kang, Jaewon Jang

School of Advanced Fusion Studies

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Sol-gel-processed Y2O3 films were used as an active-channel layer for resistive switching memory (RRAM) devices. The influence of post-annealing temperature on structural, chemical, and electrical properties was studied. Y2O3-RRAM devices comprising electrochemically active metal electrodes, Ag, and indium tin oxide (ITO) electrodes exhibited the conventional bipolar RRAM device operation. The fabricated Ag/Y2O3/ITO RRAM devices, which included 500 C-annealed Y2O3 films, exhibited less oxygen vacancy and defect sites, reduced the leakage current, increased the high-/low-resistance state ratio of more than 105, and provided excellent nonvolatile memory properties without significant deterioration for 100 cycles and 104 s.

Original language	English
Article number	015007
Journal	Semiconductor Science and Technology
Volume	37
Issue number	1
DOIs	https://doi.org/10.1088/1361-6641/ac3dd3
State	Published - Jan 2022

Keywords

YO
electrochemical metallization cell
oxygen vacancy
resistive random access memory
sol-gel

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10.1088/1361-6641/ac3dd3

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title = "Enhanced switching ratio of sol-gel-processed Y2O3RRAM device by suppressing oxygen vacancy formation at high annealing temperatures",

abstract = "Sol-gel-processed Y2O3 films were used as an active-channel layer for resistive switching memory (RRAM) devices. The influence of post-annealing temperature on structural, chemical, and electrical properties was studied. Y2O3-RRAM devices comprising electrochemically active metal electrodes, Ag, and indium tin oxide (ITO) electrodes exhibited the conventional bipolar RRAM device operation. The fabricated Ag/Y2O3/ITO RRAM devices, which included 500 C-annealed Y2O3 films, exhibited less oxygen vacancy and defect sites, reduced the leakage current, increased the high-/low-resistance state ratio of more than 105, and provided excellent nonvolatile memory properties without significant deterioration for 100 cycles and 104 s.",

keywords = "YO, electrochemical metallization cell, oxygen vacancy, resistive random access memory, sol-gel",

author = "Kyoungdu Kim and Changmin Lee and Lee, {Won Yong} and Kim, {Do Won} and Kim, {Hyeon Joong} and Lee, {Sin Hyung} and Bae, {Jin Hyuk} and Kang, {In Man} and Jaewon Jang",

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doi = "10.1088/1361-6641/ac3dd3",

language = "English",

volume = "37",

journal = "Semiconductor Science and Technology",

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T1 - Enhanced switching ratio of sol-gel-processed Y2O3RRAM device by suppressing oxygen vacancy formation at high annealing temperatures

AU - Kim, Kyoungdu

AU - Lee, Changmin

AU - Lee, Won Yong

AU - Kim, Do Won

AU - Kim, Hyeon Joong

AU - Lee, Sin Hyung

AU - Bae, Jin Hyuk

AU - Kang, In Man

AU - Jang, Jaewon

PY - 2022/1

Y1 - 2022/1

N2 - Sol-gel-processed Y2O3 films were used as an active-channel layer for resistive switching memory (RRAM) devices. The influence of post-annealing temperature on structural, chemical, and electrical properties was studied. Y2O3-RRAM devices comprising electrochemically active metal electrodes, Ag, and indium tin oxide (ITO) electrodes exhibited the conventional bipolar RRAM device operation. The fabricated Ag/Y2O3/ITO RRAM devices, which included 500 C-annealed Y2O3 films, exhibited less oxygen vacancy and defect sites, reduced the leakage current, increased the high-/low-resistance state ratio of more than 105, and provided excellent nonvolatile memory properties without significant deterioration for 100 cycles and 104 s.

AB - Sol-gel-processed Y2O3 films were used as an active-channel layer for resistive switching memory (RRAM) devices. The influence of post-annealing temperature on structural, chemical, and electrical properties was studied. Y2O3-RRAM devices comprising electrochemically active metal electrodes, Ag, and indium tin oxide (ITO) electrodes exhibited the conventional bipolar RRAM device operation. The fabricated Ag/Y2O3/ITO RRAM devices, which included 500 C-annealed Y2O3 films, exhibited less oxygen vacancy and defect sites, reduced the leakage current, increased the high-/low-resistance state ratio of more than 105, and provided excellent nonvolatile memory properties without significant deterioration for 100 cycles and 104 s.

KW - YO

KW - electrochemical metallization cell

KW - oxygen vacancy

KW - resistive random access memory

KW - sol-gel

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U2 - 10.1088/1361-6641/ac3dd3

DO - 10.1088/1361-6641/ac3dd3

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AN - SCOPUS:85122437088

SN - 0268-1242

VL - 37

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

M1 - 015007

ER -

Enhanced switching ratio of sol-gel-processed Y₂O₃RRAM device by suppressing oxygen vacancy formation at high annealing temperatures

Abstract

Keywords

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