Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

Do Won Kim, Hyeon Joong Kim, Won Yong Lee, Kyoungdu Kim, Sin Hyung Lee, Jin Hyuk Bae, In Man Kang, Kwangeun Kim, Jaewon Jang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Sol–gel-processed Y2O3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor pressure and low surface tension was added to realize the local electric field area. During drying and high-temperature post-annealing processes, the large convective flow enhanced the surface elevation, and the increased –OH groups accelerated the hydrolysis reaction and aggregation. These phenomena afforded Y2O3 films with an uneven surface morphology and an increased surface roughness. The increased roughness of the Y2O3 films attributable to the triethylamine stabilizer enhanced the local electrical field, improved device reliability, and achieved successful repetition of the switching properties over an extended period.

Original languageEnglish
Article number1943
JournalMaterials
Volume15
Issue number5
DOIs
StatePublished - 1 Mar 2022

Keywords

  • Local electric field
  • RRAM
  • Reliability
  • Sol–gel
  • Surface roughness
  • YO

Fingerprint

Dive into the research topics of 'Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field'. Together they form a unique fingerprint.

Cite this