Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

Kyu Hyoung Lee; Soon Mok Choi; Jong Wook Roh; Sungwoo Hwang; Sang Il Kim; Weon Ho Shin; Hee Jung Park; Jeong Hoon Lee; Sung Wng Kim; Dae Jin Yang

doi:10.1007/s11664-014-3446-1

Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

Kyu Hyoung Lee, Soon Mok Choi, Jong Wook Roh, Sungwoo Hwang, Sang Il Kim, Weon Ho Shin, Hee Jung Park, Jeong Hoon Lee, Sung Wng Kim, Dae Jin Yang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi_0.42Sb_1.58Te₃ by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m⁻¹ K⁻² at 300 K) could be maintained at values comparable to those of pristine Bi_0.42Sb_1.58Te₃, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi_0.42Sb_1.5535Ga_0.025Ag_0.0015Te₃ at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

Original language	English
Pages (from-to)	1531-1535
Number of pages	5
Journal	Journal of Electronic Materials
Volume	44
Issue number	6
DOIs	https://doi.org/10.1007/s11664-014-3446-1
State	Published - 1 Jun 2015

Keywords

Thermoelectric
codoping
lattice thermal conductivity
phonon scattering
point defects

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10.1007/s11664-014-3446-1

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title = "Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag",

abstract = "We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).",

keywords = "Thermoelectric, codoping, lattice thermal conductivity, phonon scattering, point defects",

author = "Lee, {Kyu Hyoung} and Choi, {Soon Mok} and Roh, {Jong Wook} and Sungwoo Hwang and Kim, {Sang Il} and Shin, {Weon Ho} and Park, {Hee Jung} and Lee, {Jeong Hoon} and Kim, {Sung Wng} and Yang, {Dae Jin}",

note = "Publisher Copyright: {\textcopyright} 2014, The Minerals, Metals & Materials Society.",

year = "2015",

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doi = "10.1007/s11664-014-3446-1",

language = "English",

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T1 - Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

AU - Lee, Kyu Hyoung

AU - Choi, Soon Mok

AU - Roh, Jong Wook

AU - Hwang, Sungwoo

AU - Kim, Sang Il

AU - Shin, Weon Ho

AU - Park, Hee Jung

AU - Lee, Jeong Hoon

AU - Kim, Sung Wng

AU - Yang, Dae Jin

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

AB - We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

KW - Thermoelectric

KW - codoping

KW - lattice thermal conductivity

KW - phonon scattering

KW - point defects

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DO - 10.1007/s11664-014-3446-1

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -

Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

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