Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes

Seoung Hwan Park; Yong Tae Moon; Jeong Sik Lee; Ho Ki Kwon; Joong Seo Park; Doyeol Ahn

doi:10.1063/1.3493648

Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes

Seoung Hwan Park, Yong Tae Moon, Jeong Sik Lee, Ho Ki Kwon, Joong Seo Park, Doyeol Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Electronic and optical properties of strain-compensated InGaN/InGaN/MgZnO quantum well (QW) structures using a MgZnO substrate are investigated using the multiband effective mass theory. A strain-compensated InGaN/InGaN/MgZnO QW structure with a larger strain shows larger matrix element than that with a smaller strain. The spontaneous emission peak rapidly increases with increasing compressive strain because the matrix element is enhanced for the strain-compensated QW structure with a larger strain. In addition, we find that the strain-compensated QW structure with the larger Mg composition in the substrate has greater spontaneous emission peak than the strain-compensated QW structure with the smaller Mg composition in the substrate.

Original language	English
Article number	121107
Journal	Applied Physics Letters
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.3493648
State	Published - 20 Sep 2010

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title = "Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes",

abstract = "Electronic and optical properties of strain-compensated InGaN/InGaN/MgZnO quantum well (QW) structures using a MgZnO substrate are investigated using the multiband effective mass theory. A strain-compensated InGaN/InGaN/MgZnO QW structure with a larger strain shows larger matrix element than that with a smaller strain. The spontaneous emission peak rapidly increases with increasing compressive strain because the matrix element is enhanced for the strain-compensated QW structure with a larger strain. In addition, we find that the strain-compensated QW structure with the larger Mg composition in the substrate has greater spontaneous emission peak than the strain-compensated QW structure with the smaller Mg composition in the substrate.",

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T1 - Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes

AU - Park, Seoung Hwan

AU - Moon, Yong Tae

AU - Lee, Jeong Sik

AU - Kwon, Ho Ki

AU - Park, Joong Seo

AU - Ahn, Doyeol

PY - 2010/9/20

Y1 - 2010/9/20

N2 - Electronic and optical properties of strain-compensated InGaN/InGaN/MgZnO quantum well (QW) structures using a MgZnO substrate are investigated using the multiband effective mass theory. A strain-compensated InGaN/InGaN/MgZnO QW structure with a larger strain shows larger matrix element than that with a smaller strain. The spontaneous emission peak rapidly increases with increasing compressive strain because the matrix element is enhanced for the strain-compensated QW structure with a larger strain. In addition, we find that the strain-compensated QW structure with the larger Mg composition in the substrate has greater spontaneous emission peak than the strain-compensated QW structure with the smaller Mg composition in the substrate.

AB - Electronic and optical properties of strain-compensated InGaN/InGaN/MgZnO quantum well (QW) structures using a MgZnO substrate are investigated using the multiband effective mass theory. A strain-compensated InGaN/InGaN/MgZnO QW structure with a larger strain shows larger matrix element than that with a smaller strain. The spontaneous emission peak rapidly increases with increasing compressive strain because the matrix element is enhanced for the strain-compensated QW structure with a larger strain. In addition, we find that the strain-compensated QW structure with the larger Mg composition in the substrate has greater spontaneous emission peak than the strain-compensated QW structure with the smaller Mg composition in the substrate.

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Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes

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