Enhancement of the thermoelectric performance of Bi0.4Sb 1.6Te3 alloys by in and Ga doping

Kyu Hyoung Lee; Sungwoo Hwang; Byungki Ryu; Kyunghan Ahn; Jongwook Roh; Daejin Yang; Sang Mock Lee; Hyunsik Kim; Sang Il Kim

doi:10.1007/s11664-012-2356-3

Enhancement of the thermoelectric performance of Bi_0.4Sb _1.6Te₃ alloys by in and Ga doping

Kyu Hyoung Lee
, Sungwoo Hwang
, Byungki Ryu
, Kyunghan Ahn
, Jongwook Roh
, Daejin Yang
, Sang Mock Lee
, Hyunsik Kim
, Sang Il Kim

Department of Materials Science and Engineering

Samsung

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi_0.4Sb_1.6Te₃ compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi_0.4Sb_1.6Te₃ compound by these synergetic effects.

Original language	English
Pages (from-to)	1617-1621
Number of pages	5
Journal	Journal of Electronic Materials
Volume	42
Issue number	7
DOIs	https://doi.org/10.1007/s11664-012-2356-3
State	Published - Jul 2013

Keywords

BiSbTe
Thermoelectric
lattice thermal conductivity
point defect
power factor

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10.1007/s11664-012-2356-3

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title = "Enhancement of the thermoelectric performance of Bi0.4Sb 1.6Te3 alloys by in and Ga doping",

abstract = "We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.\% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects.",

keywords = "BiSbTe, Thermoelectric, lattice thermal conductivity, point defect, power factor",

author = "Lee, \{Kyu Hyoung\} and Sungwoo Hwang and Byungki Ryu and Kyunghan Ahn and Jongwook Roh and Daejin Yang and Lee, \{Sang Mock\} and Hyunsik Kim and Kim, \{Sang Il\}",

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doi = "10.1007/s11664-012-2356-3",

language = "English",

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T1 - Enhancement of the thermoelectric performance of Bi0.4Sb 1.6Te3 alloys by in and Ga doping

AU - Lee, Kyu Hyoung

AU - Hwang, Sungwoo

AU - Ryu, Byungki

AU - Ahn, Kyunghan

AU - Roh, Jongwook

AU - Yang, Daejin

AU - Lee, Sang Mock

AU - Kim, Hyunsik

AU - Kim, Sang Il

PY - 2013/7

Y1 - 2013/7

N2 - We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects.

AB - We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects.

KW - BiSbTe

KW - Thermoelectric

KW - lattice thermal conductivity

KW - point defect

KW - power factor

UR - https://www.scopus.com/pages/publications/84879794686

U2 - 10.1007/s11664-012-2356-3

DO - 10.1007/s11664-012-2356-3

M3 - Article

AN - SCOPUS:84879794686

SN - 0361-5235

VL - 42

SP - 1617

EP - 1621

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Enhancement of the thermoelectric performance of Bi_0.4Sb _1.6Te₃ alloys by in and Ga doping

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Keywords

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