Enhancement of the thermoelectric performance of Bi0.4Sb 1.6Te3 alloys by in and Ga doping

Kyu Hyoung Lee; Sungwoo Hwang; Byungki Ryu; Kyunghan Ahn; Jongwook Roh; Daejin Yang; Sang Mock Lee; Hyunsik Kim; Sang Il Kim

doi:10.1007/s11664-012-2356-3

Enhancement of the thermoelectric performance of Bi_0.4Sb _1.6Te₃ alloys by in and Ga doping

Kyu Hyoung Lee, Sungwoo Hwang, Byungki Ryu, Kyunghan Ahn, Jongwook Roh, Daejin Yang, Sang Mock Lee, Hyunsik Kim, Sang Il Kim

Department of Materials Science and Engineering

Samsung

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi_0.4Sb_1.6Te₃ compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi_0.4Sb_1.6Te₃ compound by these synergetic effects.

Original language	English
Pages (from-to)	1617-1621
Number of pages	5
Journal	Journal of Electronic Materials
Volume	42
Issue number	7
DOIs	https://doi.org/10.1007/s11664-012-2356-3
State	Published - Jul 2013

Keywords

BiSbTe
Thermoelectric
lattice thermal conductivity
point defect
power factor

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10.1007/s11664-012-2356-3

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title = "Enhancement of the thermoelectric performance of Bi0.4Sb 1.6Te3 alloys by in and Ga doping",

abstract = "We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.\% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects.",

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author = "Lee, \{Kyu Hyoung\} and Sungwoo Hwang and Byungki Ryu and Kyunghan Ahn and Jongwook Roh and Daejin Yang and Lee, \{Sang Mock\} and Hyunsik Kim and Kim, \{Sang Il\}",

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doi = "10.1007/s11664-012-2356-3",

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T1 - Enhancement of the thermoelectric performance of Bi0.4Sb 1.6Te3 alloys by in and Ga doping

AU - Lee, Kyu Hyoung

AU - Hwang, Sungwoo

AU - Ryu, Byungki

AU - Ahn, Kyunghan

AU - Roh, Jongwook

AU - Yang, Daejin

AU - Lee, Sang Mock

AU - Kim, Hyunsik

AU - Kim, Sang Il

PY - 2013/7

Y1 - 2013/7

N2 - We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects.

AB - We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects.

KW - BiSbTe

KW - Thermoelectric

KW - lattice thermal conductivity

KW - point defect

KW - power factor

UR - https://www.scopus.com/pages/publications/84879794686

U2 - 10.1007/s11664-012-2356-3

DO - 10.1007/s11664-012-2356-3

M3 - Article

AN - SCOPUS:84879794686

SN - 0361-5235

VL - 42

SP - 1617

EP - 1621

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Enhancement of the thermoelectric performance of Bi_0.4Sb _1.6Te₃ alloys by in and Ga doping

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Keywords

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