Enhancement of thermoelectric properties in p-type ZnSb alloys through Cu-doping

Peyala Dharmaiah; Minsu Heo; Cheenepalli Nagarjuna; Sung Jin Jung; Sung Ok Won; Kyu Hyoung Lee; Seong Keun Kim; Jin Sang Kim; Byungmin Ahn; Hyun Sik Kim; Seung Hyub Baek

doi:10.1016/j.jallcom.2024.175739

Enhancement of thermoelectric properties in p-type ZnSb alloys through Cu-doping

Peyala Dharmaiah, Minsu Heo, Cheenepalli Nagarjuna, Sung Jin Jung, Sung Ok Won, Kyu Hyoung Lee, Seong Keun Kim, Jin Sang Kim, Byungmin Ahn, Hyun Sik Kim, Seung Hyub Baek

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

To meet the growing demand for thermoelectric devices operating in intermediate temperature ranges, it is essential to develop high-performance materials with superior thermoelectric properties and robust mechanical strength. In this study, we systematically optimized carrier concentration by introducing acceptor impurities into ZnSb materials. Our results demonstrate that doping Cu into the Zn site effectively modulates hole carrier concentration, leading to a substantial enhancement in electrical conductivity and a remarkable improvement in power factor (107 %). Consequently, we achieved a high peak ZT of 1.04 at 600 K and an average ZT_ave value of 0.63 within the temperature range of 300–600 K. This yielded a calculated efficiency of η_max = 7 % at ΔT = 300 K, for the Zn_0.99Cu_0.01Sb sample, which is 134 % higher than that of the pristine ZnSb sample (η_max = 2.98 %). Moreover, the superior hardness and fracture toughness (K_IC) of ZnSb samples compared to other state-of-the-art thermoelectric materials make them highly desirable for real-time applications.

Original language	English
Article number	175739
Journal	Journal of Alloys and Compounds
Volume	1004
DOIs	https://doi.org/10.1016/j.jallcom.2024.175739
State	Published - 5 Nov 2024

Keywords

Charge carrier concentration optimization
Mechanical performance
Power factor
Thermoelectric materials
ZnSb alloys

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10.1016/j.jallcom.2024.175739

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title = "Enhancement of thermoelectric properties in p-type ZnSb alloys through Cu-doping",

abstract = "To meet the growing demand for thermoelectric devices operating in intermediate temperature ranges, it is essential to develop high-performance materials with superior thermoelectric properties and robust mechanical strength. In this study, we systematically optimized carrier concentration by introducing acceptor impurities into ZnSb materials. Our results demonstrate that doping Cu into the Zn site effectively modulates hole carrier concentration, leading to a substantial enhancement in electrical conductivity and a remarkable improvement in power factor (107 %). Consequently, we achieved a high peak ZT of 1.04 at 600 K and an average ZTave value of 0.63 within the temperature range of 300–600 K. This yielded a calculated efficiency of ηmax = 7 % at ΔT = 300 K, for the Zn0.99Cu0.01Sb sample, which is 134 % higher than that of the pristine ZnSb sample (ηmax = 2.98 %). Moreover, the superior hardness and fracture toughness (KIC) of ZnSb samples compared to other state-of-the-art thermoelectric materials make them highly desirable for real-time applications.",

keywords = "Charge carrier concentration optimization, Mechanical performance, Power factor, Thermoelectric materials, ZnSb alloys",

author = "Peyala Dharmaiah and Minsu Heo and Cheenepalli Nagarjuna and Jung, {Sung Jin} and Won, {Sung Ok} and Lee, {Kyu Hyoung} and Kim, {Seong Keun} and Kim, {Jin Sang} and Byungmin Ahn and Kim, {Hyun Sik} and Baek, {Seung Hyub}",

note = "Publisher Copyright: {\textcopyright} 2024 The Authors",

year = "2024",

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doi = "10.1016/j.jallcom.2024.175739",

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T1 - Enhancement of thermoelectric properties in p-type ZnSb alloys through Cu-doping

AU - Dharmaiah, Peyala

AU - Heo, Minsu

AU - Nagarjuna, Cheenepalli

AU - Jung, Sung Jin

AU - Won, Sung Ok

AU - Lee, Kyu Hyoung

AU - Kim, Seong Keun

AU - Kim, Jin Sang

AU - Ahn, Byungmin

AU - Kim, Hyun Sik

AU - Baek, Seung Hyub

PY - 2024/11/5

Y1 - 2024/11/5

N2 - To meet the growing demand for thermoelectric devices operating in intermediate temperature ranges, it is essential to develop high-performance materials with superior thermoelectric properties and robust mechanical strength. In this study, we systematically optimized carrier concentration by introducing acceptor impurities into ZnSb materials. Our results demonstrate that doping Cu into the Zn site effectively modulates hole carrier concentration, leading to a substantial enhancement in electrical conductivity and a remarkable improvement in power factor (107 %). Consequently, we achieved a high peak ZT of 1.04 at 600 K and an average ZTave value of 0.63 within the temperature range of 300–600 K. This yielded a calculated efficiency of ηmax = 7 % at ΔT = 300 K, for the Zn0.99Cu0.01Sb sample, which is 134 % higher than that of the pristine ZnSb sample (ηmax = 2.98 %). Moreover, the superior hardness and fracture toughness (KIC) of ZnSb samples compared to other state-of-the-art thermoelectric materials make them highly desirable for real-time applications.

AB - To meet the growing demand for thermoelectric devices operating in intermediate temperature ranges, it is essential to develop high-performance materials with superior thermoelectric properties and robust mechanical strength. In this study, we systematically optimized carrier concentration by introducing acceptor impurities into ZnSb materials. Our results demonstrate that doping Cu into the Zn site effectively modulates hole carrier concentration, leading to a substantial enhancement in electrical conductivity and a remarkable improvement in power factor (107 %). Consequently, we achieved a high peak ZT of 1.04 at 600 K and an average ZTave value of 0.63 within the temperature range of 300–600 K. This yielded a calculated efficiency of ηmax = 7 % at ΔT = 300 K, for the Zn0.99Cu0.01Sb sample, which is 134 % higher than that of the pristine ZnSb sample (ηmax = 2.98 %). Moreover, the superior hardness and fracture toughness (KIC) of ZnSb samples compared to other state-of-the-art thermoelectric materials make them highly desirable for real-time applications.

KW - Charge carrier concentration optimization

KW - Mechanical performance

KW - Power factor

KW - Thermoelectric materials

KW - ZnSb alloys

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DO - 10.1016/j.jallcom.2024.175739

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VL - 1004

JO - Journal of Alloys and Compounds

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ER -

Enhancement of thermoelectric properties in p-type ZnSb alloys through Cu-doping

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Keywords

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