Abstract
A new compact DC/transient single electron transistor model for circuit simulation by SPICE is introduced. This model includes a newly developed equivalent circuit approach based on the time-dependent master equation and an exact conductance or trans- conductance model. The simulation speed of this model is improved, compared with that of the previous models.
Original language | English |
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Pages (from-to) | 850-852 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 38 |
Issue number | 16 |
DOIs | |
State | Published - 1 Aug 2002 |