Abstract
A new compact DC/transient single electron transistor model for circuit simulation by SPICE is introduced. This model includes a newly developed equivalent circuit approach based on the time-dependent master equation and an exact conductance or trans- conductance model. The simulation speed of this model is improved, compared with that of the previous models.
| Original language | English |
|---|---|
| Pages (from-to) | 850-852 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 38 |
| Issue number | 16 |
| DOIs | |
| State | Published - 1 Aug 2002 |