Abstract
An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
| Original language | English |
|---|---|
| Pages (from-to) | 4089-4093 |
| Number of pages | 5 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 7 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2007 |
Keywords
- Equivalent circuit
- Nanowire
- Schottky contact
- Thermal emission
- Thermionic field emission