Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

Sung Hyun Lee; Wan Shick Hong; Jong Man Kim; Hyuck Lim; Kuyng Bae Park; Chul Lae Cho; Kyung Eun Lee; Do Young Kim; Ji Sim Jung; Jang Yeon Kwon; Takashi Noguchi

doi:10.1143/JJAP.45.L485

Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

Sung Hyun Lee
, Wan Shick Hong
, Jong Man Kim
, Hyuck Lim
, Kuyng Bae Park
, Chul Lae Cho
, Kyung Eun Lee
, Do Young Kim
, Ji Sim Jung
, Jang Yeon Kwon
, Takashi Noguchi

Department of Materials Science and Engineering

Sejong University
University of Seoul
Samsung

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	L485
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	17-19
DOIs	https://doi.org/10.1143/JJAP.45.L485
State	Published - 28 Apr 2006

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10.1143/JJAP.45.L485

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Lee, S. H., Hong, W. S., Kim, J. M., Lim, H., Park, K. B., Cho, C. L., Lee, K. E., Kim, D. Y., Jung, J. S., Kwon, J. Y., & Noguchi, T. (2006). Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). Japanese Journal of Applied Physics, Part 2: Letters, 45(17-19), L485. https://doi.org/10.1143/JJAP.45.L485

Lee, Sung Hyun ; Hong, Wan Shick ; Kim, Jong Man et al. / Erratum : Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). In: Japanese Journal of Applied Physics, Part 2: Letters. 2006 ; Vol. 45, No. 17-19. pp. L485.

@article{c1078a480ba34509a82ef70e2e92f6af,

title = "Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))",

author = "Lee, \{Sung Hyun\} and Hong, \{Wan Shick\} and Kim, \{Jong Man\} and Hyuck Lim and Park, \{Kuyng Bae\} and Cho, \{Chul Lae\} and Lee, \{Kyung Eun\} and Kim, \{Do Young\} and Jung, \{Ji Sim\} and Kwon, \{Jang Yeon\} and Takashi Noguchi",

year = "2006",

month = apr,

day = "28",

doi = "10.1143/JJAP.45.L485",

language = "English",

volume = "45",

pages = "L485",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Institute of Physics",

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}

Lee, SH, Hong, WS, Kim, JM, Lim, H, Park, KB, Cho, CL, Lee, KE, Kim, DY, Jung, JS, Kwon, JY & Noguchi, T 2006, 'Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))', Japanese Journal of Applied Physics, Part 2: Letters, vol. 45, no. 17-19, pp. L485. https://doi.org/10.1143/JJAP.45.L485

Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). / Lee, Sung Hyun; Hong, Wan Shick; Kim, Jong Man et al.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 17-19, 28.04.2006, p. L485.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

AU - Lee, Sung Hyun

AU - Hong, Wan Shick

AU - Kim, Jong Man

AU - Lim, Hyuck

AU - Park, Kuyng Bae

AU - Cho, Chul Lae

AU - Lee, Kyung Eun

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Noguchi, Takashi

PY - 2006/4/28

Y1 - 2006/4/28

UR - https://www.scopus.com/pages/publications/33745299162

U2 - 10.1143/JJAP.45.L485

DO - 10.1143/JJAP.45.L485

M3 - Comment/debate

AN - SCOPUS:33745299162

SN - 0021-4922

VL - 45

SP - L485

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 17-19

ER -

Lee SH, Hong WS, Kim JM, Lim H, Park KB, Cho CL et al. Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227)). Japanese Journal of Applied Physics, Part 2: Letters. 2006 Apr 28;45(17-19):L485. doi: 10.1143/JJAP.45.L485

Erratum: Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application (Japanese Journal Applied Physics (2006) 45 (L227))

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