Erratum: Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26, L1 (2008))

Jung Hyeun Kim

doi:10.1116/1.2952482

Erratum: Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26, L1 (2008))

Department of Chemical Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	1450
Number of pages	1
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	4
DOIs	https://doi.org/10.1116/1.2952482
State	Published - 2008

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10.1116/1.2952482

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Kim, J. H. (2008). Erratum: Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26, L1 (2008)). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26(4), 1450. https://doi.org/10.1116/1.2952482

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title = "Erratum: Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26, L1 (2008))",

author = "Kim, {Jung Hyeun}",

year = "2008",

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language = "English",

volume = "26",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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Kim, JH 2008, 'Erratum: Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26, L1 (2008))', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 26, no. 4, pp. 1450. https://doi.org/10.1116/1.2952482

Erratum: Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26, L1 (2008)). / Kim, Jung Hyeun.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 4, 2008, p. 1450.

Research output: Contribution to journal › Comment/debate

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AU - Kim, Jung Hyeun

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M3 - Comment/debate

AN - SCOPUS:49749084404

SN - 1071-1023

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Erratum: Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26, L1 (2008))

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