Escimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition

Kyoung Min Lee; Jae Dam Hwang; Youn Jin Lee; Sun Jae Kim; Min Koo Han; Seunghun Jang; Moonsup Han; Sunghwan Won; Junghyun Sok; Kyoungwan Park; Wan Shick Hong

doi:10.1149/1.3237018

Escimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition

Kyoung Min Lee, Jae Dam Hwang, Youn Jin Lee, Sun Jae Kim, Min Koo Han, Seunghun Jang, Moonsup Han, Sunghwan Won, Junghyun Sok, Kyoungwan Park, Wan Shick Hong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We studied excimer laser annealing effects on silicon-rich silicon nitride films containing silicon quantum dots to develop silicon based flexible Light emitting diodes. The silicon-rich silicon nitride films were deposited by catalytic chemical vapor deposition system using a mixture of S1H₄, NH₃ and H₂ gas. The substrate temperatures in all deposition process were less than 200°C to use polyethersulphone substrate. The changing crystallity and density of silicon quantum dots were analyzed by photoluminescence spectra. The change in the luminescence behavior with nucleation of silicon quantum dots was observed after excimer laser annealing.

Original language	English
Title of host publication	Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3
Publisher	Electrochemical Society Inc.
Pages	111-116
Number of pages	6
Edition	10
ISBN (Electronic)	9781566777476
ISBN (Print)	9781566777476
DOIs	https://doi.org/10.1149/1.3237018
State	Published - 2009

Publication series

Name	ECS Transactions
Number	10
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

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10.1149/1.3237018

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Lee, K. M., Hwang, J. D., Lee, Y. J., Kim, S. J., Han, M. K., Jang, S., Han, M., Won, S., Sok, J., Park, K., & Hong, W. S. (2009). Escimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition. In Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3 (10 ed., pp. 111-116). (ECS Transactions; Vol. 25, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/1.3237018

@inproceedings{18a2973c0cf545568e739a81f8f61b37,

title = "Escimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition",

abstract = "We studied excimer laser annealing effects on silicon-rich silicon nitride films containing silicon quantum dots to develop silicon based flexible Light emitting diodes. The silicon-rich silicon nitride films were deposited by catalytic chemical vapor deposition system using a mixture of S1H4, NH3 and H2 gas. The substrate temperatures in all deposition process were less than 200°C to use polyethersulphone substrate. The changing crystallity and density of silicon quantum dots were analyzed by photoluminescence spectra. The change in the luminescence behavior with nucleation of silicon quantum dots was observed after excimer laser annealing.",

author = "Lee, {Kyoung Min} and Hwang, {Jae Dam} and Lee, {Youn Jin} and Kim, {Sun Jae} and Han, {Min Koo} and Seunghun Jang and Moonsup Han and Sunghwan Won and Junghyun Sok and Kyoungwan Park and Hong, {Wan Shick}",

year = "2009",

doi = "10.1149/1.3237018",

language = "English",

isbn = "9781566777476",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "111--116",

booktitle = "Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3",

address = "United States",

edition = "10",

}

Lee, KM, Hwang, JD, Lee, YJ, Kim, SJ, Han, MK, Jang, S, Han, M, Won, S, Sok, J, Park, K & Hong, WS 2009, Escimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition. in Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3. 10 edn, ECS Transactions, no. 10, vol. 25, Electrochemical Society Inc., pp. 111-116. https://doi.org/10.1149/1.3237018

Escimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition. / Lee, Kyoung Min; Hwang, Jae Dam; Lee, Youn Jin et al.
Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3. 10. ed. Electrochemical Society Inc., 2009. p. 111-116 (ECS Transactions; Vol. 25, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Escimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition

AU - Lee, Kyoung Min

AU - Hwang, Jae Dam

AU - Lee, Youn Jin

AU - Kim, Sun Jae

AU - Han, Min Koo

AU - Jang, Seunghun

AU - Han, Moonsup

AU - Won, Sunghwan

AU - Sok, Junghyun

AU - Park, Kyoungwan

AU - Hong, Wan Shick

PY - 2009

Y1 - 2009

N2 - We studied excimer laser annealing effects on silicon-rich silicon nitride films containing silicon quantum dots to develop silicon based flexible Light emitting diodes. The silicon-rich silicon nitride films were deposited by catalytic chemical vapor deposition system using a mixture of S1H4, NH3 and H2 gas. The substrate temperatures in all deposition process were less than 200°C to use polyethersulphone substrate. The changing crystallity and density of silicon quantum dots were analyzed by photoluminescence spectra. The change in the luminescence behavior with nucleation of silicon quantum dots was observed after excimer laser annealing.

AB - We studied excimer laser annealing effects on silicon-rich silicon nitride films containing silicon quantum dots to develop silicon based flexible Light emitting diodes. The silicon-rich silicon nitride films were deposited by catalytic chemical vapor deposition system using a mixture of S1H4, NH3 and H2 gas. The substrate temperatures in all deposition process were less than 200°C to use polyethersulphone substrate. The changing crystallity and density of silicon quantum dots were analyzed by photoluminescence spectra. The change in the luminescence behavior with nucleation of silicon quantum dots was observed after excimer laser annealing.

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DO - 10.1149/1.3237018

M3 - Conference contribution

AN - SCOPUS:79952757277

SN - 9781566777476

T3 - ECS Transactions

SP - 111

EP - 116

BT - Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3

PB - Electrochemical Society Inc.

ER -

Escimer laser annealing effects of silicon-rich silicon nitride films prepared by using catalytic chemical vapor deposition

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