Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance

Hyunjin Park; Sang Il Kim; Jeong Yeon Kim; Seong Mee Hwang; Hyun Sik Kim

doi:10.3390/ceramics6010029

Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance

Hyunjin Park, Sang Il Kim, Jeong Yeon Kim, Seong Mee Hwang, Hyun Sik Kim

Department of Materials Science and Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Recent studies have revealed the outstanding thermoelectric performance of Bi-doped n-type SnSe. In this regard, we analyzed the band parameters for Sn_1−xBi_xSe (x = 0.00, 0.02, 0.04, and 0.06) using simple equations and the Single Parabolic Band model. Bi doping suppresses the carrier-phonon coupling while increasing the density-of-states effective mass. The n-type SnSe is known to have two conduction bands converge near 600 K. Bi doping changes the temperature at which the band convergence occurs. When x = 0.04, its weighted mobility maximized near 500 K, which indicated the possible band convergence. The highest zT of the x = 0.04 sample at mid-temperatures (473–573 K) can be attributed to the engineered band convergence via Bi doping.

Original language	English
Pages (from-to)	504-513
Number of pages	10
Journal	Ceramics
Volume	6
Issue number	1
DOIs	https://doi.org/10.3390/ceramics6010029
State	Published - Mar 2023

Keywords

B-factor
SnSe
single parabolic band model
thermoelectric
weighted mobility

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10.3390/ceramics6010029

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title = "Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance",

abstract = "Recent studies have revealed the outstanding thermoelectric performance of Bi-doped n-type SnSe. In this regard, we analyzed the band parameters for Sn1−xBixSe (x = 0.00, 0.02, 0.04, and 0.06) using simple equations and the Single Parabolic Band model. Bi doping suppresses the carrier-phonon coupling while increasing the density-of-states effective mass. The n-type SnSe is known to have two conduction bands converge near 600 K. Bi doping changes the temperature at which the band convergence occurs. When x = 0.04, its weighted mobility maximized near 500 K, which indicated the possible band convergence. The highest zT of the x = 0.04 sample at mid-temperatures (473–573 K) can be attributed to the engineered band convergence via Bi doping.",

keywords = "B-factor, SnSe, single parabolic band model, thermoelectric, weighted mobility",

author = "Hyunjin Park and Kim, {Sang Il} and Kim, {Jeong Yeon} and Hwang, {Seong Mee} and Kim, {Hyun Sik}",

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T1 - Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance

AU - Park, Hyunjin

AU - Kim, Sang Il

AU - Kim, Jeong Yeon

AU - Hwang, Seong Mee

AU - Kim, Hyun Sik

PY - 2023/3

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N2 - Recent studies have revealed the outstanding thermoelectric performance of Bi-doped n-type SnSe. In this regard, we analyzed the band parameters for Sn1−xBixSe (x = 0.00, 0.02, 0.04, and 0.06) using simple equations and the Single Parabolic Band model. Bi doping suppresses the carrier-phonon coupling while increasing the density-of-states effective mass. The n-type SnSe is known to have two conduction bands converge near 600 K. Bi doping changes the temperature at which the band convergence occurs. When x = 0.04, its weighted mobility maximized near 500 K, which indicated the possible band convergence. The highest zT of the x = 0.04 sample at mid-temperatures (473–573 K) can be attributed to the engineered band convergence via Bi doping.

AB - Recent studies have revealed the outstanding thermoelectric performance of Bi-doped n-type SnSe. In this regard, we analyzed the band parameters for Sn1−xBixSe (x = 0.00, 0.02, 0.04, and 0.06) using simple equations and the Single Parabolic Band model. Bi doping suppresses the carrier-phonon coupling while increasing the density-of-states effective mass. The n-type SnSe is known to have two conduction bands converge near 600 K. Bi doping changes the temperature at which the band convergence occurs. When x = 0.04, its weighted mobility maximized near 500 K, which indicated the possible band convergence. The highest zT of the x = 0.04 sample at mid-temperatures (473–573 K) can be attributed to the engineered band convergence via Bi doping.

KW - B-factor

KW - SnSe

KW - single parabolic band model

KW - thermoelectric

KW - weighted mobility

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ER -

Estimation of Temperature-Dependent Band Parameters for Bi-Doped SnSe with High Thermoelectric Performance

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Keywords

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