Eutectic Bonding in Sequential Bi and Sn Layers for Low-Temperature Interconnections

Sri Harini Rajendran, Jae Pil Jung, Chul Hwa Jung, Seong Min Seo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In the current study, low-temperature bonding of SAC 305 solder balls is achieved using electroplated Bi and Sn layers. The Bi and Sn interface initiates melting at the eutectic temperature, providing the opportunity to bond the electroplated layers with SAC 305 solder ball at 170°C. Compared to the conventional use of Sn58Bi solder paste, the current method allows for control over the quantity of bismuth within the solder joint. A nanocomposite solder ball is fabricated using ultrasonic melt treatment dispersion and disc punching technique. The hybrid bond formed with the nanocomposite solder ball displays higher shear strength, attributed to Bi-phase refinement and dispersion strengthening.

Original languageEnglish
Title of host publication2024 International Conference on Electronics Packaging, ICEP 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages277-278
Number of pages2
ISBN (Electronic)9784991191176
DOIs
StatePublished - 2024
Event23rd International Conference on Electronics Packaging, ICEP 2024 - Toyama, Japan
Duration: 17 Apr 202420 Apr 2024

Publication series

Name2024 International Conference on Electronics Packaging, ICEP 2024

Conference

Conference23rd International Conference on Electronics Packaging, ICEP 2024
Country/TerritoryJapan
CityToyama
Period17/04/2420/04/24

Keywords

  • Bismuth
  • electroplating
  • Hybrid bonding
  • SAC 305
  • Shear Strength

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