Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

K. H. Cho; B. H. Choi; S. H. Son; S. W. Hwang; D. Ahn; B. G. Park; B. Naser; J. F. Lin; J. P. Bird

doi:10.1063/1.1854738

Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

K. H. Cho, B. H. Choi, S. H. Son, S. W. Hwang, D. Ahn, B. G. Park, B. Naser, J. F. Lin, J. P. Bird

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI _D/dV _DS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.

Original language	English
Article number	043101
Pages (from-to)	043101-1-043101-3
Journal	Applied Physics Letters
Volume	86
Issue number	4
DOIs	https://doi.org/10.1063/1.1854738
State	Published - 2005

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@article{4823ee2d03094882b5e3f4bfd24f8df0,

title = "Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor",

abstract = "We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI D/dV DS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.",

author = "Cho, \{K. H.\} and Choi, \{B. H.\} and Son, \{S. H.\} and Hwang, \{S. W.\} and D. Ahn and Park, \{B. G.\} and B. Naser and Lin, \{J. F.\} and Bird, \{J. P.\}",

year = "2005",

doi = "10.1063/1.1854738",

language = "English",

volume = "86",

pages = "043101--1--043101--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

AU - Cho, K. H.

AU - Choi, B. H.

AU - Son, S. H.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Park, B. G.

AU - Naser, B.

AU - Lin, J. F.

AU - Bird, J. P.

PY - 2005

Y1 - 2005

N2 - We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI D/dV DS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.

AB - We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI D/dV DS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.

UR - https://www.scopus.com/pages/publications/13644274231

U2 - 10.1063/1.1854738

DO - 10.1063/1.1854738

M3 - Article

AN - SCOPUS:13644274231

SN - 0003-6951

VL - 86

SP - 043101-1-043101-3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043101

ER -

Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

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