Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

K. H. Cho; B. H. Choi; S. H. Son; S. W. Hwang; D. Ahn; B. G. Park; B. Naser; J. F. Lin; J. P. Bird

doi:10.1063/1.1854738

Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

K. H. Cho
, B. H. Choi
, S. H. Son
, S. W. Hwang
, D. Ahn
, B. G. Park
, B. Naser
, J. F. Lin
, J. P. Bird

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI _D/dV _DS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.

Original language	English
Article number	043101
Pages (from-to)	043101-1-043101-3
Journal	Applied Physics Letters
Volume	86
Issue number	4
DOIs	https://doi.org/10.1063/1.1854738
State	Published - 2005

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abstract = "We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI D/dV DS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.",

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AU - Cho, K. H.

AU - Choi, B. H.

AU - Son, S. H.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Park, B. G.

AU - Naser, B.

AU - Lin, J. F.

AU - Bird, J. P.

PY - 2005

Y1 - 2005

N2 - We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI D/dV DS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.

AB - We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dI D/dV DS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.

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DO - 10.1063/1.1854738

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

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