Evidence of the C 60/Cu contact formation after thermal treatment

S. W. Cho; J. H. Seo; C. Y. Kim; K. H. Yoo; K. Jeong; C. N. Whang; Y. Yi; S. J. Kang; M. Noh

doi:10.1063/1.2193038

Evidence of the C ₆₀/Cu contact formation after thermal treatment

S. W. Cho, J. H. Seo, C. Y. Kim, K. H. Yoo, K. Jeong, C. N. Whang, Y. Yi, S. J. Kang, M. Noh

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The origin of the lowered electron injection barrier height of C60 Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C60 and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C60. We obtained the complete energy level diagram of C60 Cu before and after the heat treatment.

Original language	English
Article number	151103
Journal	Applied Physics Letters
Volume	88
Issue number	15
DOIs	https://doi.org/10.1063/1.2193038
State	Published - 10 Apr 2006

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title = "Evidence of the C 60/Cu contact formation after thermal treatment",

abstract = "The origin of the lowered electron injection barrier height of C60 Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C60 and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C60. We obtained the complete energy level diagram of C60 Cu before and after the heat treatment.",

author = "Cho, {S. W.} and Seo, {J. H.} and Kim, {C. Y.} and Yoo, {K. H.} and K. Jeong and Whang, {C. N.} and Y. Yi and Kang, {S. J.} and M. Noh",

year = "2006",

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day = "10",

doi = "10.1063/1.2193038",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Evidence of the C 60/Cu contact formation after thermal treatment

AU - Cho, S. W.

AU - Seo, J. H.

AU - Kim, C. Y.

AU - Yoo, K. H.

AU - Jeong, K.

AU - Whang, C. N.

AU - Yi, Y.

AU - Kang, S. J.

AU - Noh, M.

PY - 2006/4/10

Y1 - 2006/4/10

N2 - The origin of the lowered electron injection barrier height of C60 Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C60 and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C60. We obtained the complete energy level diagram of C60 Cu before and after the heat treatment.

AB - The origin of the lowered electron injection barrier height of C60 Cu was investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy (XPS). The onset of the highest occupied molecular orbital level was shifted by 0.2 eV toward high binding energy upon the heat treatment, resulting in the improved injection characteristics of the device. Moreover, an unexpected gap state has been observed at 1.2 eV below the Fermi level. The XPS core-level spectra revealed that the chemical reaction between C60 and Cu at the interface induced the gap state after heat treatment. The gap state pinned the Fermi level close to the lowest unoccupied molecular orbital of C60. We obtained the complete energy level diagram of C60 Cu before and after the heat treatment.

UR - http://www.scopus.com/inward/record.url?scp=33646147358&partnerID=8YFLogxK

U2 - 10.1063/1.2193038

DO - 10.1063/1.2193038

M3 - Article

AN - SCOPUS:33646147358

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151103

ER -

Evidence of the C ₆₀/Cu contact formation after thermal treatment

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