Excimer laser annealing effects on AlGaN/GaN heterostructures

In Hak Lee, Beom Soo Joo, Hyuk Jin Kim, Ye Seul Yun, Seun Yup Jang, Min Gyu Kang, Chong Yun Kang, Byeong Gyu Park, Moonsup Han, Young Jun Chang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We investigated impact of excimer laser annealing on the AlGaN/GaN heterojunction structures, where the 2-dimensional electron gas (2DEG) is formed. When applying homogeneous laser pulses at various laser densities, the electrical resistance of the 2DEG shows sudden increase along with sharp decrease of the carrier mobility and slight decrease of the carrier density. Especially, when applying laser density of 300 mJ/cm2, we could obtain such jump of electrical resistance even after 2 min, i.e. 2400 pulses at 20 Hz. Low temperature photoluminescence and x-ray photoemission spectroscopy measurements show that the excimer laser annealing suppresses the coherent charge carriers and oxides the sample surface to form Ga2O. We estimate the activation energy of suppressing 2DEG to be 0.89 eV for the ELA process. We suggest that the excimer laser annealing has potential for gate oxide fabrication, surface passivation, and lateral pattering of 2DEG structures.

Original languageEnglish
Pages (from-to)628-632
Number of pages5
JournalCurrent Applied Physics
Issue number6
StatePublished - 1 Jun 2016


  • GaN
  • Hall measurement
  • Laser annealing
  • PL
  • XPS


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