Experimental demonstration of a ferroelectric FET using paper substrate

Changhwan Shin; Gwang Geun Lee; Dae Hee Han; Seung Pil Han; Eisuke Tokumitsu; Shun Ichiro Ohmi; Dong Joo Kim; Hiroshi Ishiwara; Minseo Park; Seung Hyun Kim; Wan Gyu Lee; Yun Jeong Hwang; Byung Eun Park

doi:10.1587/elex.11.20140447

Experimental demonstration of a ferroelectric FET using paper substrate

Changhwan Shin, Gwang Geun Lee, Dae Hee Han, Seung Pil Han, Eisuke Tokumitsu, Shun Ichiro Ohmi, Dong Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung Hyun Kim, Wan Gyu Lee, Yun Jeong Hwang, Byung Eun Park

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased- only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ~20V for the transistor on paper. An on/off current ratio of ~10² is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

Original language	English
Article number	20140447
Journal	IEICE Electronics Express
Volume	11
Issue number	14
DOIs	https://doi.org/10.1587/elex.11.20140447
State	Published - 4 Jul 2014

Keywords

Ferroelectric transistor
P(VDF-TRFE)
P3HT
Paper substrate

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10.1587/elex.11.20140447

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@article{8c94c8246b564e88b0c41fe79b3a967d,

title = "Experimental demonstration of a ferroelectric FET using paper substrate",

abstract = "A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased- only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ~20V for the transistor on paper. An on/off current ratio of ~102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).",

keywords = "Ferroelectric transistor, P(VDF-TRFE), P3HT, Paper substrate",

author = "Changhwan Shin and Lee, {Gwang Geun} and Han, {Dae Hee} and Han, {Seung Pil} and Eisuke Tokumitsu and Ohmi, {Shun Ichiro} and Kim, {Dong Joo} and Hiroshi Ishiwara and Minseo Park and Kim, {Seung Hyun} and Lee, {Wan Gyu} and Hwang, {Yun Jeong} and Park, {Byung Eun}",

year = "2014",

month = jul,

day = "4",

doi = "10.1587/elex.11.20140447",

language = "English",

volume = "11",

journal = "IEICE Electronics Express",

issn = "1349-2543",

publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",

number = "14",

}

TY - JOUR

T1 - Experimental demonstration of a ferroelectric FET using paper substrate

AU - Shin, Changhwan

AU - Lee, Gwang Geun

AU - Han, Dae Hee

AU - Han, Seung Pil

AU - Tokumitsu, Eisuke

AU - Ohmi, Shun Ichiro

AU - Kim, Dong Joo

AU - Ishiwara, Hiroshi

AU - Park, Minseo

AU - Kim, Seung Hyun

AU - Lee, Wan Gyu

AU - Hwang, Yun Jeong

AU - Park, Byung Eun

PY - 2014/7/4

Y1 - 2014/7/4

N2 - A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased- only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ~20V for the transistor on paper. An on/off current ratio of ~102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

AB - A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solutionbased- only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ~20V for the transistor on paper. An on/off current ratio of ~102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

KW - Ferroelectric transistor

KW - P(VDF-TRFE)

KW - P3HT

KW - Paper substrate

UR - http://www.scopus.com/inward/record.url?scp=84905041411&partnerID=8YFLogxK

U2 - 10.1587/elex.11.20140447

DO - 10.1587/elex.11.20140447

M3 - Article

AN - SCOPUS:84905041411

SN - 1349-2543

VL - 11

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 14

M1 - 20140447

ER -

Experimental demonstration of a ferroelectric FET using paper substrate

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Keywords

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