Explicit continuous current-voltage (I-V) models for fully-depleted surrounding-gate MOSFETs (SGMOSFETs) with a finite doping body

Yun Seop Yuast, Namki Cho, Jung Hyun Oh, Sung Woo Hwang, Doyeol Ahn

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

An analytical and continuous dc model for cylindrical doped surrounding-gate MOSFETs (SGMOSFETs) in the fully-depleted regime is presented. Starting from Poisson's equation, an Implicit charge equation is derived approximately by a superposition principle with the exact channel potential and the charge equations in the depletion approximation. Also, a new explicit charge equation is derived from the implicit charge equation. The current equations without any chargesheet approximation are based on the implicit and explicit charge control models, and both of them are valid for all the operation regions (linear, saturation, and subthreshold) and traces the transition between them without any fitting parameters. In the case of the SGMOSFETs with the fully-depleted condition, both of results simulated from the SGMOSFET models reproduce various 3D simulation results within 5% errors.

Original languageEnglish
Pages (from-to)3316-3320
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume10
Issue number5
DOIs
StatePublished - May 2010

Keywords

  • Charge control model
  • Fully-Depleted
  • Superposition principle
  • Surrounding-Gate MOSFET (SGMOSFET)

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