TY - JOUR
T1 - Explicit continuous current-voltage (I-V) models for fully-depleted surrounding-gate MOSFETs (SGMOSFETs) with a finite doping body
AU - Yuast, Yun Seop
AU - Cho, Namki
AU - Oh, Jung Hyun
AU - Hwang, Sung Woo
AU - Ahn, Doyeol
PY - 2010/5
Y1 - 2010/5
N2 - An analytical and continuous dc model for cylindrical doped surrounding-gate MOSFETs (SGMOSFETs) in the fully-depleted regime is presented. Starting from Poisson's equation, an Implicit charge equation is derived approximately by a superposition principle with the exact channel potential and the charge equations in the depletion approximation. Also, a new explicit charge equation is derived from the implicit charge equation. The current equations without any chargesheet approximation are based on the implicit and explicit charge control models, and both of them are valid for all the operation regions (linear, saturation, and subthreshold) and traces the transition between them without any fitting parameters. In the case of the SGMOSFETs with the fully-depleted condition, both of results simulated from the SGMOSFET models reproduce various 3D simulation results within 5% errors.
AB - An analytical and continuous dc model for cylindrical doped surrounding-gate MOSFETs (SGMOSFETs) in the fully-depleted regime is presented. Starting from Poisson's equation, an Implicit charge equation is derived approximately by a superposition principle with the exact channel potential and the charge equations in the depletion approximation. Also, a new explicit charge equation is derived from the implicit charge equation. The current equations without any chargesheet approximation are based on the implicit and explicit charge control models, and both of them are valid for all the operation regions (linear, saturation, and subthreshold) and traces the transition between them without any fitting parameters. In the case of the SGMOSFETs with the fully-depleted condition, both of results simulated from the SGMOSFET models reproduce various 3D simulation results within 5% errors.
KW - Charge control model
KW - Fully-Depleted
KW - Superposition principle
KW - Surrounding-Gate MOSFET (SGMOSFET)
UR - http://www.scopus.com/inward/record.url?scp=77954967049&partnerID=8YFLogxK
U2 - 10.1166/jnn.2010.2271
DO - 10.1166/jnn.2010.2271
M3 - Article
AN - SCOPUS:77954967049
SN - 1533-4880
VL - 10
SP - 3316
EP - 3320
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
IS - 5
ER -