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Explicit continuous current-voltage (I-V) models for fully-depleted surrounding-gate MOSFETs (SGMOSFETs) with a finite doping body

  • Yun Seop Yuast
  • , Namki Cho
  • , Jung Hyun Oh
  • , Sung Woo Hwang
  • , Doyeol Ahn
  • Hankyong National University
  • Korea University
  • University of Seoul

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

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