Extraction and modeling of gate electrode resistance in RF MOSFETs

Myounggon Kang; In Man Kang; Hyungcheol Shin

Extraction and modeling of gate electrode resistance in RF MOSFETs

Myounggon Kang, In Man Kang, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Analytical physical-based gate resistance model is developed in this paper. Extracted effective gate resistance is compared to measured data and verified with the model. The proposed gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers.

Original language	English
Title of host publication	2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Pages	207-210
Number of pages	4
State	Published - 2005
Event	2005 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States Duration: 9 May 2005 → 11 May 2005

Publication series

Name	2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Conference

Conference	2005 International Conference on Integrated Circuit Design and Technology, ICICDT
Country/Territory	United States
City	Austin, TX
Period	9/05/05 → 11/05/05

Keywords

ELECTRODE
EXTRACTION
GATE RESISTANCE
MODELING
RF MOSFET

Cite this

@inproceedings{fed945c971b848dc8223ceb7e4a2bcf7,

title = "Extraction and modeling of gate electrode resistance in RF MOSFETs",

abstract = "A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Analytical physical-based gate resistance model is developed in this paper. Extracted effective gate resistance is compared to measured data and verified with the model. The proposed gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers.",

keywords = "ELECTRODE, EXTRACTION, GATE RESISTANCE, MODELING, RF MOSFET",

author = "Myounggon Kang and Kang, {In Man} and Hyungcheol Shin",

year = "2005",

language = "English",

isbn = "0780390814",

series = "2005 International Conference on Integrated Circuit Design and Technology, ICICDT",

pages = "207--210",

booktitle = "2005 International Conference on Integrated Circuit Design and Technology, ICICDT",

note = "2005 International Conference on Integrated Circuit Design and Technology, ICICDT ; Conference date: 09-05-2005 Through 11-05-2005",

}

Kang, M, Kang, IM & Shin, H 2005, Extraction and modeling of gate electrode resistance in RF MOSFETs. in 2005 International Conference on Integrated Circuit Design and Technology, ICICDT. 2005 International Conference on Integrated Circuit Design and Technology, ICICDT, pp. 207-210, 2005 International Conference on Integrated Circuit Design and Technology, ICICDT, Austin, TX, United States, 9/05/05.

Extraction and modeling of gate electrode resistance in RF MOSFETs. / Kang, Myounggon; Kang, In Man; Shin, Hyungcheol.
2005 International Conference on Integrated Circuit Design and Technology, ICICDT. 2005. p. 207-210 (2005 International Conference on Integrated Circuit Design and Technology, ICICDT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Extraction and modeling of gate electrode resistance in RF MOSFETs

AU - Kang, Myounggon

AU - Kang, In Man

AU - Shin, Hyungcheol

PY - 2005

Y1 - 2005

N2 - A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Analytical physical-based gate resistance model is developed in this paper. Extracted effective gate resistance is compared to measured data and verified with the model. The proposed gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers.

AB - A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Analytical physical-based gate resistance model is developed in this paper. Extracted effective gate resistance is compared to measured data and verified with the model. The proposed gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers.

KW - ELECTRODE

KW - EXTRACTION

KW - GATE RESISTANCE

KW - MODELING

KW - RF MOSFET

UR - http://www.scopus.com/inward/record.url?scp=25844432331&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:25844432331

SN - 0780390814

T3 - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

SP - 207

EP - 210

BT - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

T2 - 2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Y2 - 9 May 2005 through 11 May 2005

ER -

Extraction and modeling of gate electrode resistance in RF MOSFETs

Abstract

Publication series

Conference

Keywords

Other files and links

Fingerprint

Cite this