Skip to main navigation Skip to search Skip to main content

Extraction and modeling of physics-based gate resistance components in RF MOSFETs

  • Seoul National University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Fingerprint

Dive into the research topics of 'Extraction and modeling of physics-based gate resistance components in RF MOSFETs'. Together they form a unique fingerprint.
Sort by

Physics

Engineering