TY - JOUR
T1 - Extrusion Suppression of TSV Filling Metal by Cu-W Electroplating for Three-Dimensional Microelectronic Packaging
AU - Roh, Myong Hoon
AU - Sharma, Ashutosh
AU - Lee, Jun Hyeong
AU - Jung, Jae Pil
N1 - Publisher Copyright:
© 2015, The Minerals, Metals & Materials Society and ASM International.
PY - 2015/5
Y1 - 2015/5
N2 - Extrusion behavior of Cu filling in through-silicon-via (TSV) under thermal loading was investigated in this study. In order to suppress the extrusion of Cu-filled TSV, Cu-W was filled in a tapered TSV by electroplating. The Cu-filled TSV was used as a reference for comparison. Defect less filling of Cu-W in TSV was achieved at a composition 92.4 wt pct Cu and 7.6 wt pct W. The coefficients of thermal expansion of both Cu-7.6 pctW and Cu were 10.8 × 10−6/°C and 16.5 × 10−6/°C, respectively. Initially, both Cu and Cu-W filled TSVs were annealed for 30 minutes at 723 K (450 °C) and the extrusion heights were measured. The results showed that the extrusion of Cu-W filled was suppressed significantly compared to Cu-filled TSVs. The annealed extrusion heights of Cu and Cu-W were found to be 1.369 and 0.465 µm, respectively. This showed around 34 pct lower extrusion height of Cu-W filled TSV as compared to Cu-filled TSV. The extrusion kinetics with different annealing durations and the mechanism of the suppression of extrusion in Cu-W filled TSV are also reported here.
AB - Extrusion behavior of Cu filling in through-silicon-via (TSV) under thermal loading was investigated in this study. In order to suppress the extrusion of Cu-filled TSV, Cu-W was filled in a tapered TSV by electroplating. The Cu-filled TSV was used as a reference for comparison. Defect less filling of Cu-W in TSV was achieved at a composition 92.4 wt pct Cu and 7.6 wt pct W. The coefficients of thermal expansion of both Cu-7.6 pctW and Cu were 10.8 × 10−6/°C and 16.5 × 10−6/°C, respectively. Initially, both Cu and Cu-W filled TSVs were annealed for 30 minutes at 723 K (450 °C) and the extrusion heights were measured. The results showed that the extrusion of Cu-W filled was suppressed significantly compared to Cu-filled TSVs. The annealed extrusion heights of Cu and Cu-W were found to be 1.369 and 0.465 µm, respectively. This showed around 34 pct lower extrusion height of Cu-W filled TSV as compared to Cu-filled TSV. The extrusion kinetics with different annealing durations and the mechanism of the suppression of extrusion in Cu-W filled TSV are also reported here.
UR - https://www.scopus.com/pages/publications/84925519370
U2 - 10.1007/s11661-015-2801-z
DO - 10.1007/s11661-015-2801-z
M3 - Article
AN - SCOPUS:84925519370
SN - 1073-5623
VL - 46
SP - 2051
EP - 2062
JO - Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science
JF - Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science
IS - 5
ER -