F-Shaped Tunnel Field-Effect Transistor (TFET) for the low-power application

Seunghyun Yun, Jeongmin Oh, Seokjung Kang, Yoon Kim, Jang Hyun Kim, Garam Kim, Sangwan Kim

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (VON) maintaining high on-state current (ION) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower VON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher ION and 7 mV/dec smaller average SS with the same VON as that for L-shaped TFET.

Original languageEnglish
Article number760
Issue number11
StatePublished - 1 Nov 2019


  • Band-to-band tunneling
  • Corner effect
  • Electric field crowding
  • L-shaped TFET
  • Line tunneling
  • Tunnel field-effect transistor (TFET)


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