F-Shaped Tunnel Field-Effect Transistor (TFET) for the low-power application

Seunghyun Yun; Jeongmin Oh; Seokjung Kang; Yoon Kim; Jang Hyun Kim; Garam Kim; Sangwan Kim

doi:10.3390/mi10110760

F-Shaped Tunnel Field-Effect Transistor (TFET) for the low-power application

Seunghyun Yun, Jeongmin Oh, Seokjung Kang, Yoon Kim, Jang Hyun Kim, Garam Kim, Sangwan Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (V_ON) maintaining high on-state current (I_ON) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower V_ON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher I_ON and 7 mV/dec smaller average SS with the same V_ON as that for L-shaped TFET.

Original language	English
Article number	760
Journal	Micromachines
Volume	10
Issue number	11
DOIs	https://doi.org/10.3390/mi10110760
State	Published - 1 Nov 2019

Keywords

Band-to-band tunneling
Corner effect
Electric field crowding
L-shaped TFET
Line tunneling
Tunnel field-effect transistor (TFET)

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10.3390/mi10110760

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title = "F-Shaped Tunnel Field-Effect Transistor (TFET) for the low-power application",

abstract = "In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (VON) maintaining high on-state current (ION) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower VON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher ION and 7 mV/dec smaller average SS with the same VON as that for L-shaped TFET.",

keywords = "Band-to-band tunneling, Corner effect, Electric field crowding, L-shaped TFET, Line tunneling, Tunnel field-effect transistor (TFET)",

author = "Seunghyun Yun and Jeongmin Oh and Seokjung Kang and Yoon Kim and Kim, {Jang Hyun} and Garam Kim and Sangwan Kim",

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doi = "10.3390/mi10110760",

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T1 - F-Shaped Tunnel Field-Effect Transistor (TFET) for the low-power application

AU - Yun, Seunghyun

AU - Oh, Jeongmin

AU - Kang, Seokjung

AU - Kim, Yoon

AU - Kim, Jang Hyun

AU - Kim, Garam

AU - Kim, Sangwan

PY - 2019/11/1

Y1 - 2019/11/1

N2 - In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (VON) maintaining high on-state current (ION) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower VON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher ION and 7 mV/dec smaller average SS with the same VON as that for L-shaped TFET.

AB - In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (VON) maintaining high on-state current (ION) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower VON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher ION and 7 mV/dec smaller average SS with the same VON as that for L-shaped TFET.

KW - Band-to-band tunneling

KW - Corner effect

KW - Electric field crowding

KW - L-shaped TFET

KW - Line tunneling

KW - Tunnel field-effect transistor (TFET)

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JO - Micromachines

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IS - 11

M1 - 760

ER -

F-Shaped Tunnel Field-Effect Transistor (TFET) for the low-power application

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Keywords

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