TY - JOUR
T1 - Fabrication and characteristics of electroplated Sn-0.7Cu micro-bumps for flip-chip packaging
AU - Roh, Myong Hoon
AU - Lee, Hea Yeol
AU - Kim, Wonjoong
AU - Jung, Jae Pil
PY - 2011/5
Y1 - 2011/5
N2 - The current study investigates the electroplating characteristics of Sn-Cu eutectic micro-bumps electroplated on a Si chip for flip chip application. Under bump metallization (UBM) layers consisting of Cr, Cu, Ni and Au sequentially from bottom to top with the aim of achieving Sn-Cu bumps 10 × 10 × 6 μm in size, with 20 μm pitch. In order to determine optimal plating parameters, the polarization curve, current density and plating time were analyzed. Experimental results showed the equilibrium potential from the Sn-Cu polarization curve is -0.465 V, which is attained when Sn-Cu electro-deposition occurred. The thickness of the electroplated bumps increased with rising current density and plating time up to 20 mA/cm2 and 30 min respectively. The near eutectic composition of the Sn-0.72wt%Cu bump was obtained by plating at 10 mA/cm2for 20 min, and the bump size at these conditions was 10 × 10 × 6 μm. The shear strength of the eutectic SnCu bump was 9.0 gf when the shearing tip height was 50% of the bump height.
AB - The current study investigates the electroplating characteristics of Sn-Cu eutectic micro-bumps electroplated on a Si chip for flip chip application. Under bump metallization (UBM) layers consisting of Cr, Cu, Ni and Au sequentially from bottom to top with the aim of achieving Sn-Cu bumps 10 × 10 × 6 μm in size, with 20 μm pitch. In order to determine optimal plating parameters, the polarization curve, current density and plating time were analyzed. Experimental results showed the equilibrium potential from the Sn-Cu polarization curve is -0.465 V, which is attained when Sn-Cu electro-deposition occurred. The thickness of the electroplated bumps increased with rising current density and plating time up to 20 mA/cm2 and 30 min respectively. The near eutectic composition of the Sn-0.72wt%Cu bump was obtained by plating at 10 mA/cm2for 20 min, and the bump size at these conditions was 10 × 10 × 6 μm. The shear strength of the eutectic SnCu bump was 9.0 gf when the shearing tip height was 50% of the bump height.
KW - Bonding
KW - Electronic materials
KW - Mechanical properties
KW - Plating
KW - Scanning electron microscopy (SEM)
UR - http://www.scopus.com/inward/record.url?scp=79958802374&partnerID=8YFLogxK
U2 - 10.3365/KJMM.2011.49.5.411
DO - 10.3365/KJMM.2011.49.5.411
M3 - Article
AN - SCOPUS:79958802374
SN - 1738-8228
VL - 49
SP - 411
EP - 418
JO - Journal of Korean Institute of Metals and Materials
JF - Journal of Korean Institute of Metals and Materials
IS - 5
ER -