Fabrication and characterization of a MFIS-FET with a PVDF-TrFE/ZrO ₂/Si structure

A metal-ferroelectric-insulator-semiconductor (MFIS) structure was fabricated using a ZrO₂ buffer layer and a polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) film as a ferroelectric film. The ZrO₂ film was prepared by using a sol-gel method. On the ZrO ₂/Si structures, a PVDF-TrFE film was deposited by using a sol-gel method. They were characterized by atomic force microscopy (AFM). The memory window width in the capacitance-voltage (C-V) curve of the Au/PVDFTrFE/ZrO ₂/Si structure was about 2.0 V for a voltage sweep of ±7 V. Base on these results, we fabricated metal-ferroelectric-insulator-semiconductor field effect transistor (MFIS-FET) structure. The memory window width in the drain current-gate voltage (I_D-V_G) curve of the MFIS-FET was about 2.5 V.