Fabrication and characterization of an enhancement-mode planar resonant tunneling transistor

Seunghun Son; Sungwoo Hwang; Doyeol Ahn; Jungill Lee; Youngju Park; Yunseop Yu

doi:10.1109/TNANO.2009.2018109

Fabrication and characterization of an enhancement-mode planar resonant tunneling transistor

Seunghun Son, Sungwoo Hwang, Doyeol Ahn, Jungill Lee, Youngju Park, Yunseop Yu

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E¹) and the first excited state (E²) of the FockDarwin states.

Original language	English
Article number	4803781
Pages (from-to)	123-127
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	9
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2009.2018109
State	Published - Jan 2010

Keywords

Enhancement mode
Fock-Darwin states
In-plane gates (IPGs)
Resonant tunneling

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10.1109/TNANO.2009.2018109

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abstract = "We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E1) and the first excited state (E2) of the FockDarwin states.",

keywords = "Enhancement mode, Fock-Darwin states, In-plane gates (IPGs), Resonant tunneling",

author = "Seunghun Son and Sungwoo Hwang and Doyeol Ahn and Jungill Lee and Youngju Park and Yunseop Yu",

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AU - Son, Seunghun

AU - Hwang, Sungwoo

AU - Ahn, Doyeol

AU - Lee, Jungill

AU - Park, Youngju

AU - Yu, Yunseop

PY - 2010/1

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N2 - We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E1) and the first excited state (E2) of the FockDarwin states.

AB - We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancement-mode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). This NDR spectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E1) and the first excited state (E2) of the FockDarwin states.

KW - Enhancement mode

KW - Fock-Darwin states

KW - In-plane gates (IPGs)

KW - Resonant tunneling

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Fabrication and characterization of an enhancement-mode planar resonant tunneling transistor

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