Fabrication and characterization of (Bi,La)4Ti3O 12 films using LaAlO3 Buffer layers for MFIS structures

Byung Eun Park; Hiroshi Ishiwara

doi:10.1080/10584580490456362

Fabrication and characterization of (Bi,La)₄Ti₃O ₁₂ films using LaAlO₃ Buffer layers for MFIS structures

Byung Eun Park, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Tokyo Institute of Technology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi_3.35La_0.75Ti₃O₁₂ ferroelectric films and LaAlO₃ buffer layers on Si(100) substrates. LaAlO₃ films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N₂ annealing in RTA (rapid thermal annealing) furnace at 800°C for 1 min. On the optimized LaAlO ₃/Si structure, a BLT film with 480 nm in thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO₃/Si diode was about 4.5 V for voltage sweep of ±10 V. It was also found that the retention time of this diode was longer than 5 days.

Original language	English
Pages (from-to)	141-147
Number of pages	7
Journal	Integrated Ferroelectrics
Volume	62
DOIs	https://doi.org/10.1080/10584580490456362
State	Published - 2004

Keywords

(Bi,La)TiO
LaAlO
MBD
MFIS structure
Sol-gel

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10.1080/10584580490456362

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title = "Fabrication and characterization of (Bi,La)4Ti3O 12 films using LaAlO3 Buffer layers for MFIS structures",

abstract = "We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi3.35La0.75Ti3O12 ferroelectric films and LaAlO3 buffer layers on Si(100) substrates. LaAlO3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N2 annealing in RTA (rapid thermal annealing) furnace at 800°C for 1 min. On the optimized LaAlO 3/Si structure, a BLT film with 480 nm in thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO3/Si diode was about 4.5 V for voltage sweep of ±10 V. It was also found that the retention time of this diode was longer than 5 days.",

keywords = "(Bi,La)TiO, LaAlO, MBD, MFIS structure, Sol-gel",

author = "Park, {Byung Eun} and Hiroshi Ishiwara",

year = "2004",

doi = "10.1080/10584580490456362",

language = "English",

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journal = "Integrated Ferroelectrics",

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TY - JOUR

T1 - Fabrication and characterization of (Bi,La)4Ti3O 12 films using LaAlO3 Buffer layers for MFIS structures

AU - Park, Byung Eun

AU - Ishiwara, Hiroshi

PY - 2004

Y1 - 2004

N2 - We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi3.35La0.75Ti3O12 ferroelectric films and LaAlO3 buffer layers on Si(100) substrates. LaAlO3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N2 annealing in RTA (rapid thermal annealing) furnace at 800°C for 1 min. On the optimized LaAlO 3/Si structure, a BLT film with 480 nm in thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO3/Si diode was about 4.5 V for voltage sweep of ±10 V. It was also found that the retention time of this diode was longer than 5 days.

AB - We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi3.35La0.75Ti3O12 ferroelectric films and LaAlO3 buffer layers on Si(100) substrates. LaAlO3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N2 annealing in RTA (rapid thermal annealing) furnace at 800°C for 1 min. On the optimized LaAlO 3/Si structure, a BLT film with 480 nm in thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO3/Si diode was about 4.5 V for voltage sweep of ±10 V. It was also found that the retention time of this diode was longer than 5 days.

KW - (Bi,La)TiO

KW - LaAlO

KW - MBD

KW - MFIS structure

KW - Sol-gel

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U2 - 10.1080/10584580490456362

DO - 10.1080/10584580490456362

M3 - Article

AN - SCOPUS:10844275125

SN - 1058-4587

VL - 62

SP - 141

EP - 147

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Fabrication and characterization of (Bi,La)₄Ti₃O ₁₂ films using LaAlO₃ Buffer layers for MFIS structures

Abstract

Keywords

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