Fabrication and characterization of fin SONOS flash memory with separated double-gate structure

Jang Gn Yun, Yoon Kim, Il Han Park, Jung Hoon Lee, Sangwoo Kang, Dong Hua Lee, Seongjae Cho, Doo Hyun Kim, Gil Sung Lee, Won Bo Sim, Younghwan Son, Hyungcheol Shin, Jong Duk Lee, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

In this work, we have fabricated and characterized the 3-dimensional fin SONOS flash memory. This device has two independent gates on both sides of Si-fin and each of them governs two side-channels. Fabrication flow and array structure are described as well as operation schemes. The 4-bit/cell operation is demonstrated with the multi-bit concept in fabricated devices. Some fabrication issues related with device characteristics and reliabilities are delivered.

Original languageEnglish
Pages (from-to)1498-1504
Number of pages7
JournalSolid-State Electronics
Volume52
Issue number10
DOIs
StatePublished - Oct 2008

Keywords

  • 3-Dimensional structure
  • 4-Bit/cell operation
  • Fin SONOS flash memory
  • Separated double-gate

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