Fabrication and characterization of fin SONOS flash memory with separated double-gate structure

Jang Gn Yun; Yoon Kim; Il Han Park; Jung Hoon Lee; Sangwoo Kang; Dong Hua Lee; Seongjae Cho; Doo Hyun Kim; Gil Sung Lee; Won Bo Sim; Younghwan Son; Hyungcheol Shin; Jong Duk Lee; Byung Gook Park

doi:10.1016/j.sse.2008.06.021

Fabrication and characterization of fin SONOS flash memory with separated double-gate structure

Jang Gn Yun
, Yoon Kim
, Il Han Park
, Jung Hoon Lee
, Sangwoo Kang
, Dong Hua Lee
, Seongjae Cho
, Doo Hyun Kim
, Gil Sung Lee
, Won Bo Sim
, Younghwan Son
, Hyungcheol Shin
, Jong Duk Lee
, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this work, we have fabricated and characterized the 3-dimensional fin SONOS flash memory. This device has two independent gates on both sides of Si-fin and each of them governs two side-channels. Fabrication flow and array structure are described as well as operation schemes. The 4-bit/cell operation is demonstrated with the multi-bit concept in fabricated devices. Some fabrication issues related with device characteristics and reliabilities are delivered.

Original language	English
Pages (from-to)	1498-1504
Number of pages	7
Journal	Solid-State Electronics
Volume	52
Issue number	10
DOIs	https://doi.org/10.1016/j.sse.2008.06.021
State	Published - Oct 2008

Keywords

3-Dimensional structure
4-Bit/cell operation
Fin SONOS flash memory
Separated double-gate

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10.1016/j.sse.2008.06.021

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@article{b31aeae037cf482f969d79253b454034,

title = "Fabrication and characterization of fin SONOS flash memory with separated double-gate structure",

abstract = "In this work, we have fabricated and characterized the 3-dimensional fin SONOS flash memory. This device has two independent gates on both sides of Si-fin and each of them governs two side-channels. Fabrication flow and array structure are described as well as operation schemes. The 4-bit/cell operation is demonstrated with the multi-bit concept in fabricated devices. Some fabrication issues related with device characteristics and reliabilities are delivered.",

keywords = "3-Dimensional structure, 4-Bit/cell operation, Fin SONOS flash memory, Separated double-gate",

author = "Yun, \{Jang Gn\} and Yoon Kim and Park, \{Il Han\} and Lee, \{Jung Hoon\} and Sangwoo Kang and Lee, \{Dong Hua\} and Seongjae Cho and Kim, \{Doo Hyun\} and Lee, \{Gil Sung\} and Sim, \{Won Bo\} and Younghwan Son and Hyungcheol Shin and Lee, \{Jong Duk\} and Park, \{Byung Gook\}",

year = "2008",

month = oct,

doi = "10.1016/j.sse.2008.06.021",

language = "English",

volume = "52",

pages = "1498--1504",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "10",

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TY - JOUR

T1 - Fabrication and characterization of fin SONOS flash memory with separated double-gate structure

AU - Yun, Jang Gn

AU - Kim, Yoon

AU - Park, Il Han

AU - Lee, Jung Hoon

AU - Kang, Sangwoo

AU - Lee, Dong Hua

AU - Cho, Seongjae

AU - Kim, Doo Hyun

AU - Lee, Gil Sung

AU - Sim, Won Bo

AU - Son, Younghwan

AU - Shin, Hyungcheol

AU - Lee, Jong Duk

AU - Park, Byung Gook

PY - 2008/10

Y1 - 2008/10

N2 - In this work, we have fabricated and characterized the 3-dimensional fin SONOS flash memory. This device has two independent gates on both sides of Si-fin and each of them governs two side-channels. Fabrication flow and array structure are described as well as operation schemes. The 4-bit/cell operation is demonstrated with the multi-bit concept in fabricated devices. Some fabrication issues related with device characteristics and reliabilities are delivered.

AB - In this work, we have fabricated and characterized the 3-dimensional fin SONOS flash memory. This device has two independent gates on both sides of Si-fin and each of them governs two side-channels. Fabrication flow and array structure are described as well as operation schemes. The 4-bit/cell operation is demonstrated with the multi-bit concept in fabricated devices. Some fabrication issues related with device characteristics and reliabilities are delivered.

KW - 3-Dimensional structure

KW - 4-Bit/cell operation

KW - Fin SONOS flash memory

KW - Separated double-gate

UR - https://www.scopus.com/pages/publications/50849128793

U2 - 10.1016/j.sse.2008.06.021

DO - 10.1016/j.sse.2008.06.021

M3 - Article

AN - SCOPUS:50849128793

SN - 0038-1101

VL - 52

SP - 1498

EP - 1504

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Fabrication and characterization of fin SONOS flash memory with separated double-gate structure

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Keywords

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