Fabrication and characterization of MFIS-FET Using Au/BLT/LZO/Si structures

Ho Seung Jeon; Gwang Geun Lee; Jeong Hwan Kim; Joo Nam Kim; Yun Soo Choi; Byung Eun Park

doi:10.1080/00150190802367984

Fabrication and characterization of MFIS-FET Using Au/BLT/LZO/Si structures

Ho Seung Jeon, Gwang Geun Lee, Jeong Hwan Kim, Joo Nam Kim, Yun Soo Choi, Byung Eun Park

University of Seoul

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We fabricated the n-channel metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) using an Au/(Bi,La) ₄Ti ₃O₁₂/LaZrO_x/Si(100) gate structure. We observed that the LaZrO_x thin film had the equivalent oxide thickness value of around 8.7 nm. The 420-nm-thick (Bi,La) ₄Ti₃O ₁₂ film on a LaZrO_x/Si structure, showed a good ferroelectric property and had the width of the memory window of 1.2 V for a bias voltage sweeping of ±7 V. The drain current-gate voltage (I _D-V_G) of an Au/(Bi,La)₄Ti₃O ₁₂/ LaZrO_X/Si(100) MFIS-FET showed threshold voltage shift (memory window width) owing to the ferroelectric (Bi,La)₄Ti ₃O₁₂ film. The drain current-drain voltage (I _D-V_G) characteristic curves exhibit typical n-channel field-effect transistor current-voltage characteristic. However, relatively large leakage current observed in the I_D-V_G and the I _D-V_G characteristic curves, might be caused by the high density of pores in the BLT film.

Original language	English
Pages (from-to)	81-89
Number of pages	9
Journal	Ferroelectrics
Volume	368
Issue number	1 PART 2
DOIs	https://doi.org/10.1080/00150190802367984
State	Published - 2008
Event	11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia Duration: 3 Sep 2007 → 7 Sep 2007

Keywords

(Bi,La) TiO
Ferroelectric memory
LaZrO
Metal-ferroelectric-insulator-silicon

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@article{852423974707472a9ff515b4a44a51ce,

title = "Fabrication and characterization of MFIS-FET Using Au/BLT/LZO/Si structures",

abstract = "We fabricated the n-channel metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) using an Au/(Bi,La) 4Ti 3O12/LaZrOx/Si(100) gate structure. We observed that the LaZrOx thin film had the equivalent oxide thickness value of around 8.7 nm. The 420-nm-thick (Bi,La) 4Ti3O 12 film on a LaZrOx/Si structure, showed a good ferroelectric property and had the width of the memory window of 1.2 V for a bias voltage sweeping of ±7 V. The drain current-gate voltage (I D-VG) of an Au/(Bi,La)4Ti3O 12/ LaZrOX/Si(100) MFIS-FET showed threshold voltage shift (memory window width) owing to the ferroelectric (Bi,La)4Ti 3O12 film. The drain current-drain voltage (I D-VG) characteristic curves exhibit typical n-channel field-effect transistor current-voltage characteristic. However, relatively large leakage current observed in the ID-VG and the I D-VG characteristic curves, might be caused by the high density of pores in the BLT film.",

keywords = "(Bi,La) TiO, Ferroelectric memory, LaZrO, Metal-ferroelectric-insulator-silicon",

author = "Jeon, {Ho Seung} and Lee, {Gwang Geun} and Kim, {Jeong Hwan} and Kim, {Joo Nam} and Choi, {Yun Soo} and Park, {Byung Eun}",

year = "2008",

doi = "10.1080/00150190802367984",

language = "English",

volume = "368",

pages = "81--89",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1 PART 2",

note = "11th European Meeting on Ferroelectricity, EMF-2007 ; Conference date: 03-09-2007 Through 07-09-2007",

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TY - JOUR

T1 - Fabrication and characterization of MFIS-FET Using Au/BLT/LZO/Si structures

AU - Jeon, Ho Seung

AU - Lee, Gwang Geun

AU - Kim, Jeong Hwan

AU - Kim, Joo Nam

AU - Choi, Yun Soo

AU - Park, Byung Eun

PY - 2008

Y1 - 2008

N2 - We fabricated the n-channel metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) using an Au/(Bi,La) 4Ti 3O12/LaZrOx/Si(100) gate structure. We observed that the LaZrOx thin film had the equivalent oxide thickness value of around 8.7 nm. The 420-nm-thick (Bi,La) 4Ti3O 12 film on a LaZrOx/Si structure, showed a good ferroelectric property and had the width of the memory window of 1.2 V for a bias voltage sweeping of ±7 V. The drain current-gate voltage (I D-VG) of an Au/(Bi,La)4Ti3O 12/ LaZrOX/Si(100) MFIS-FET showed threshold voltage shift (memory window width) owing to the ferroelectric (Bi,La)4Ti 3O12 film. The drain current-drain voltage (I D-VG) characteristic curves exhibit typical n-channel field-effect transistor current-voltage characteristic. However, relatively large leakage current observed in the ID-VG and the I D-VG characteristic curves, might be caused by the high density of pores in the BLT film.

AB - We fabricated the n-channel metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) using an Au/(Bi,La) 4Ti 3O12/LaZrOx/Si(100) gate structure. We observed that the LaZrOx thin film had the equivalent oxide thickness value of around 8.7 nm. The 420-nm-thick (Bi,La) 4Ti3O 12 film on a LaZrOx/Si structure, showed a good ferroelectric property and had the width of the memory window of 1.2 V for a bias voltage sweeping of ±7 V. The drain current-gate voltage (I D-VG) of an Au/(Bi,La)4Ti3O 12/ LaZrOX/Si(100) MFIS-FET showed threshold voltage shift (memory window width) owing to the ferroelectric (Bi,La)4Ti 3O12 film. The drain current-drain voltage (I D-VG) characteristic curves exhibit typical n-channel field-effect transistor current-voltage characteristic. However, relatively large leakage current observed in the ID-VG and the I D-VG characteristic curves, might be caused by the high density of pores in the BLT film.

KW - (Bi,La) TiO

KW - Ferroelectric memory

KW - LaZrO

KW - Metal-ferroelectric-insulator-silicon

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U2 - 10.1080/00150190802367984

DO - 10.1080/00150190802367984

M3 - Conference article

AN - SCOPUS:75449101595

SN - 0015-0193

VL - 368

SP - 81

EP - 89

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 2

T2 - 11th European Meeting on Ferroelectricity, EMF-2007

Y2 - 3 September 2007 through 7 September 2007

ER -

Fabrication and characterization of MFIS-FET Using Au/BLT/LZO/Si structures

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