Fabrication and characterization of MFIS-FET Using Au/BLT/LZO/Si structures

Ho Seung Jeon, Gwang Geun Lee, Jeong Hwan Kim, Joo Nam Kim, Yun Soo Choi, Byung Eun Park

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


We fabricated the n-channel metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) using an Au/(Bi,La) 4Ti 3O12/LaZrOx/Si(100) gate structure. We observed that the LaZrOx thin film had the equivalent oxide thickness value of around 8.7 nm. The 420-nm-thick (Bi,La) 4Ti3O 12 film on a LaZrOx/Si structure, showed a good ferroelectric property and had the width of the memory window of 1.2 V for a bias voltage sweeping of ±7 V. The drain current-gate voltage (I D-VG) of an Au/(Bi,La)4Ti3O 12/ LaZrOX/Si(100) MFIS-FET showed threshold voltage shift (memory window width) owing to the ferroelectric (Bi,La)4Ti 3O12 film. The drain current-drain voltage (I D-VG) characteristic curves exhibit typical n-channel field-effect transistor current-voltage characteristic. However, relatively large leakage current observed in the ID-VG and the I D-VG characteristic curves, might be caused by the high density of pores in the BLT film.

Original languageEnglish
Pages (from-to)81-89
Number of pages9
Issue number1 PART 2
StatePublished - 2008
Event11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia
Duration: 3 Sep 20077 Sep 2007


  • (Bi,La) TiO
  • Ferroelectric memory
  • LaZrO
  • Metal-ferroelectric-insulator-silicon


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