Fabrication and characterization of MFIS-FET using Bi3.25La 0.75Ti3O12/ZrO2/Si structure

Young Uk Song, Jun Seo Park, Joo Won Yoon, Gwang Geun Lee, Byung Eun Park, Chul Ju Kim, Yun Soo Choi, June Hwan Koh

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


A metal-ferroelectric-insulator-semiconductor structure (MFIS) has been fabricated by Zro2and Bi3.25La0.75Ti 3o12 as the buffer layer and ferroelectric film in forming MFIS diodes on Si(100) substrates, respectively. Zro2 films were prepared by a sol-gel method. Then, they were carried out dry o2 annealing in a rapid thermal annealing (RTA) furnace at 700°C for 10 min. On the ZrOj/Si structures, Bi3.25 La0.74TiI 3O12 films were deposited by sol-gel method and they crystallized rapid thermal annealing in O2 atmosphere at 750°C for 30 min. They were characterized by X-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The memory window width in capacitance-voItage(C- V) curve of the Au/BLT/ZrO2/Si diode was about 1.0 V for a voltage sweep of ±4 V. Base on these results, we fabricated the MFIS-FET structure. The memory window width in drain current-gate voltage (I D-VG) curve of the MFIS-FET was about 0.7 V.

Original languageEnglish
Pages (from-to)203-210
Number of pages8
JournalIntegrated Ferroelectrics
Issue number1
StatePublished - 2006


  • BiLaTiOZrO
  • FeRAM
  • Memory window


Dive into the research topics of 'Fabrication and characterization of MFIS-FET using Bi3.25La 0.75Ti3O12/ZrO2/Si structure'. Together they form a unique fingerprint.

Cite this