Abstract
A metal-ferroelectric-insulator-semiconductor structure (MFIS) has been fabricated by Zro2and Bi3.25La0.75Ti 3o12 as the buffer layer and ferroelectric film in forming MFIS diodes on Si(100) substrates, respectively. Zro2 films were prepared by a sol-gel method. Then, they were carried out dry o2 annealing in a rapid thermal annealing (RTA) furnace at 700°C for 10 min. On the ZrOj/Si structures, Bi3.25 La0.74TiI 3O12 films were deposited by sol-gel method and they crystallized rapid thermal annealing in O2 atmosphere at 750°C for 30 min. They were characterized by X-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The memory window width in capacitance-voItage(C- V) curve of the Au/BLT/ZrO2/Si diode was about 1.0 V for a voltage sweep of ±4 V. Base on these results, we fabricated the MFIS-FET structure. The memory window width in drain current-gate voltage (I D-VG) curve of the MFIS-FET was about 0.7 V.
Original language | English |
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Pages (from-to) | 203-210 |
Number of pages | 8 |
Journal | Integrated Ferroelectrics |
Volume | 84 |
Issue number | 1 |
DOIs | |
State | Published - 2006 |
Keywords
- BiLaTiOZrO
- FeRAM
- MFIS-FET
- Memory window