Fabrication and electrical characteristics of metal-ferroelectric- semiconductor field effect transistor based on poly(vinylidene fluoride)

Jeong Hwan Kim, Byung Eun Park, Hiroshi Ishiwara

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We fabricated the metal-ferroelectric-semiconductor field effect transistor (MFSFET) using poly(vinylidene fluoride) (PVDF) thin film as a ferroelectric layer. PVDF thin films were prepared by spin-coating PVDF solutions of 2-6 wt% on Si(100) wafers with source and drain diffusion regions. The drain current-gate voltage (ID-VG) characteristics of MFSFET exhibited ferroelectric hysteretic curves inducing a counterclockwise loop similar to that of other ferroelectric materials. It seems that the deposited PVDF films were crystallized with the ferroelectric β phase. The memory window widths of the MFSFET were more than 1.0 V. The drain current-drain voltage (ID-VG) characteristics show that the MFSFET operates with the PVDF thin film used as a gate dielectric material. The MFSFET using PVDF as ferroelectric layer has promising potential for use in low-voltage operable one-transistor (1T)-type ferroelectric random access memories (FeRAMs) using organic material.

Original languageEnglish
Pages (from-to)8472-8475
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume47
Issue number11
DOIs
StatePublished - 14 Nov 2008

Keywords

  • FRAM
  • MFSFET
  • Memory window
  • PVDF
  • Spin-coating

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