@inproceedings{e6680e3337774c39bb5541db902aad43,
title = "Fabrication and electrical characterization of lambda DNA field effect transistors",
abstract = "We report fabrication and characterization of lambda DNA field effect transistors. Our transistor is basically a DNA network formed in between the source and the drain electrode on a SiO2/Si substrate. Measured source-drain current (ISD) as a function of the source-drain bias shows nonlinear characteristics. Such non-linearity is typically a manifestation of the semiconducting behavior and is believed to be caused by the energy gap of the DNA molecules. Our sample shows a field effect behavior and we observe that ISD increases as the gate bias becomes more negative. It suggests that the lambda DNA used in our experiment is a p-type molecule.",
keywords = "Field effect transistor, Lambda DNA, Molecules",
author = "Hwang, {Jong Seung} and Son, {Maeng Ho} and Hwang, {Sung Woo} and Doyeol Ahn",
year = "2007",
doi = "10.1063/1.2729915",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "359--360",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}