Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung; C. K. Hyon; J. H. Park; S. W. Hwang; D. Ahn; M. H. Son; B. D. Min; Kim Yong; E. K. Kim

doi:10.1063/1.124631

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung
, C. K. Hyon
, J. H. Park
, S. W. Hwang
, D. Ahn
, M. H. Son
, B. D. Min
, Kim Yong
, E. K. Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.

Original language	English
Pages (from-to)	1167-1169
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	8
DOIs	https://doi.org/10.1063/1.124631
State	Published - 23 Aug 1999

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10.1063/1.124631

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title = "Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots",

abstract = "Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.",

author = "Jung, \{S. K.\} and Hyon, \{C. K.\} and Park, \{J. H.\} and Hwang, \{S. W.\} and D. Ahn and Son, \{M. H.\} and Min, \{B. D.\} and Kim Yong and Kim, \{E. K.\}",

year = "1999",

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doi = "10.1063/1.124631",

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AU - Jung, S. K.

AU - Hyon, C. K.

AU - Park, J. H.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Son, M. H.

AU - Min, B. D.

AU - Yong, Kim

AU - Kim, E. K.

PY - 1999/8/23

Y1 - 1999/8/23

N2 - Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.

AB - Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.

UR - https://www.scopus.com/pages/publications/0032615375

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DO - 10.1063/1.124631

M3 - Article

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SN - 0003-6951

VL - 75

SP - 1167

EP - 1169

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

Abstract

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