Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung; C. K. Hyon; J. H. Park; S. W. Hwang; D. Ahn; M. H. Son; B. D. Min; Kim Yong; E. K. Kim

doi:10.1063/1.124631

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

S. K. Jung, C. K. Hyon, J. H. Park, S. W. Hwang, D. Ahn, M. H. Son, B. D. Min, Kim Yong, E. K. Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.

Original language	English
Pages (from-to)	1167-1169
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	8
DOIs	https://doi.org/10.1063/1.124631
State	Published - 23 Aug 1999

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title = "Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots",

abstract = "Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.",

author = "Jung, \{S. K.\} and Hyon, \{C. K.\} and Park, \{J. H.\} and Hwang, \{S. W.\} and D. Ahn and Son, \{M. H.\} and Min, \{B. D.\} and Kim Yong and Kim, \{E. K.\}",

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doi = "10.1063/1.124631",

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AU - Jung, S. K.

AU - Hyon, C. K.

AU - Park, J. H.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Son, M. H.

AU - Min, B. D.

AU - Yong, Kim

AU - Kim, E. K.

PY - 1999/8/23

Y1 - 1999/8/23

N2 - Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.

AB - Planar-type self-assembled quantum dots (SAQD) devices were fabricated by depositing Al metal electrodes on an InAs SAQD wafer. The current-voltage characteristics of the SAQD devices exhibited negative differential resistance (NDR) effects above 77 K. This NDR effects were due to the three-dimensional-zero-dimensional resonant tunneling.

UR - https://www.scopus.com/pages/publications/0032615375

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DO - 10.1063/1.124631

M3 - Article

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SN - 0003-6951

VL - 75

SP - 1167

EP - 1169

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

Abstract

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