Abstract
Metal-ferroelectric-insulator-semiconductor structure capacitors with a polyvinylidene fluoride trifluoroethylene (75/25) (PVDF-TrFE) ferroelectric and a lanthanum zirconium oxide (LaZrOx) insulator layers were fabricated on a p-type Si(100) substrate in this work. The thin films were prepared using the spin-coating method. The LaZrOx thin films were crystallized at 750°C for 30 min in an O2 ambient. Negligible hysteresis was observed from the CV (capacitance-voltage) characteristic of the LaZrO x/Si structure. The equivalent oxide thickness (EOT) was about 8.2 nm. Then the PVDF-TrFE film was spin-coated on the LaZrOx/Si structure. To crystallize the PVDF-TrFE, the structure was annealed at 165°C for 30 min. The memory window width in the CV curve of the Au/PVDF-TrFE/ LaZrOx/Si structure was about 4 V for a voltage sweep of ±5 V, and the leakage current density was about 10-8 A/cm2 at 35 kV/cm for a 100-nm-thick film.
Original language | English |
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Pages (from-to) | 4203-4208 |
Number of pages | 6 |
Journal | International Journal of Modern Physics B |
Volume | 24 |
Issue number | 22 |
DOIs | |
State | Published - 10 Sep 2010 |
Keywords
- Ferroelectric
- LaZrO
- PVDF-TrFE
- memory