Fabrication and electrical properties of Au/PVDF-TrFE/LaZrO x/Si(100) structure

Hui Seong Han, Gwang Geun Lee, Byung Eun Park

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Metal-ferroelectric-insulator-semiconductor structure capacitors with a polyvinylidene fluoride trifluoroethylene (75/25) (PVDF-TrFE) ferroelectric and a lanthanum zirconium oxide (LaZrOx) insulator layers were fabricated on a p-type Si(100) substrate in this work. The thin films were prepared using the spin-coating method. The LaZrOx thin films were crystallized at 750°C for 30 min in an O2 ambient. Negligible hysteresis was observed from the CV (capacitance-voltage) characteristic of the LaZrO x/Si structure. The equivalent oxide thickness (EOT) was about 8.2 nm. Then the PVDF-TrFE film was spin-coated on the LaZrOx/Si structure. To crystallize the PVDF-TrFE, the structure was annealed at 165°C for 30 min. The memory window width in the CV curve of the Au/PVDF-TrFE/ LaZrOx/Si structure was about 4 V for a voltage sweep of ±5 V, and the leakage current density was about 10-8 A/cm2 at 35 kV/cm for a 100-nm-thick film.

Original languageEnglish
Pages (from-to)4203-4208
Number of pages6
JournalInternational Journal of Modern Physics B
Volume24
Issue number22
DOIs
StatePublished - 10 Sep 2010

Keywords

  • Ferroelectric
  • LaZrO
  • PVDF-TrFE
  • memory

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