Fabrication and electrical properties of Pt/(Bi,La) 4Ti 3O 12/HfO 2/Si structures

Byung Eun Park, Kazuhiro Takahashi, Hiroshi Ishiwara

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26 Scopus citations


HfO 2 and (Bi,La) 4Ti 3O 12 were chosen as the respective buffer layer and ferroelectric film in forming MFIS (metal-ferroelectric-insulator-semiconductor) diodes on Si(100) substrates. HfO 2 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex-situ O 2 annealing in a rapid thermal annealing (RTA) furnace at 800°C for 1 min. In order to obtain optimal properties, especially the electrical leakage current characteristic, three kinds of HfO 2 films were prepared, which were deposited at room temperature, at 300°C substrate temperature, and with chemical oxidation. On the HfO 2/Si structures, Bi 3.45La 0.75Ti 3O 12 films ranging from 300 nm to 400 nm in thickness were deposited by a sol-gel technique and they were crystallized in O 2 atmosphere at 750°C. The memory window width in the C-V (capacitance-voltage) curve of the BLT/HfO 2/Si diode was about 1.0 V for a voltage sweep of ±6 V. It was also found that the retention time of this diode was longer than 8 hours.

Original languageEnglish
Pages (from-to)346-349
Number of pages4
JournalJournal of the Korean Physical Society
Issue number1
StatePublished - Jan 2005


  • (Bi,La) Ti O
  • HfO
  • MBD
  • MFIS
  • Retention
  • Sol-gel


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