Fabrication of 1K-bit 1T2C-type ferroelectric memory cell array

Shuu'ichirou Yamamoto; Toru Ishikawa; Takaaki Fuchikami; Hyun Soo Kim; Kouji Aizawa; Byung Eun Park; Taisuke Furukawa; Hiroshi Ohki; Shin Kikuchi; Hiromasa Hoko; Hiroshi Ishiwara

doi:10.1080/10584580490899389

Fabrication of 1K-bit 1T2C-type ferroelectric memory cell array

Shuu'ichirou Yamamoto, Toru Ishikawa, Takaaki Fuchikami, Hyun Soo Kim, Kouji Aizawa, Byung Eun Park, Taisuke Furukawa, Hiroshi Ohki, Shin Kikuchi, Hiromasa Hoko, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A 1K-bit 1T2C-type ferroelectric memory array has been designed and fabricated by combination of a 0.35 μm gate length CMOS process and a 3 μm design rule ferroelectric process. The write and readout operation in a 1K-bit 1T2C-type memory array cell has been confirmed experimentally.

Original language	English
Pages (from-to)	281-286
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	67
DOIs	https://doi.org/10.1080/10584580490899389
State	Published - 2004

Keywords

Cell array
Ferroelectric random access memory (FeRAM)
Non-destructive readout

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10.1080/10584580490899389

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title = "Fabrication of 1K-bit 1T2C-type ferroelectric memory cell array",

abstract = "A 1K-bit 1T2C-type ferroelectric memory array has been designed and fabricated by combination of a 0.35 μm gate length CMOS process and a 3 μm design rule ferroelectric process. The write and readout operation in a 1K-bit 1T2C-type memory array cell has been confirmed experimentally.",

keywords = "Cell array, Ferroelectric random access memory (FeRAM), Non-destructive readout",

author = "Shuu'ichirou Yamamoto and Toru Ishikawa and Takaaki Fuchikami and Kim, {Hyun Soo} and Kouji Aizawa and Park, {Byung Eun} and Taisuke Furukawa and Hiroshi Ohki and Shin Kikuchi and Hiromasa Hoko and Hiroshi Ishiwara",

year = "2004",

doi = "10.1080/10584580490899389",

language = "English",

volume = "67",

pages = "281--286",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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T1 - Fabrication of 1K-bit 1T2C-type ferroelectric memory cell array

AU - Yamamoto, Shuu'ichirou

AU - Ishikawa, Toru

AU - Fuchikami, Takaaki

AU - Kim, Hyun Soo

AU - Aizawa, Kouji

AU - Park, Byung Eun

AU - Furukawa, Taisuke

AU - Ohki, Hiroshi

AU - Kikuchi, Shin

AU - Hoko, Hiromasa

AU - Ishiwara, Hiroshi

PY - 2004

Y1 - 2004

N2 - A 1K-bit 1T2C-type ferroelectric memory array has been designed and fabricated by combination of a 0.35 μm gate length CMOS process and a 3 μm design rule ferroelectric process. The write and readout operation in a 1K-bit 1T2C-type memory array cell has been confirmed experimentally.

AB - A 1K-bit 1T2C-type ferroelectric memory array has been designed and fabricated by combination of a 0.35 μm gate length CMOS process and a 3 μm design rule ferroelectric process. The write and readout operation in a 1K-bit 1T2C-type memory array cell has been confirmed experimentally.

KW - Cell array

KW - Ferroelectric random access memory (FeRAM)

KW - Non-destructive readout

UR - http://www.scopus.com/inward/record.url?scp=33751188938&partnerID=8YFLogxK

U2 - 10.1080/10584580490899389

DO - 10.1080/10584580490899389

M3 - Article

AN - SCOPUS:33751188938

SN - 1058-4587

VL - 67

SP - 281

EP - 286

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Fabrication of 1K-bit 1T2C-type ferroelectric memory cell array

Abstract

Keywords

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