Fabrication of 1K-bit 1T2C-type ferroelectric memory cell array

Shuu'ichirou Yamamoto, Toru Ishikawa, Takaaki Fuchikami, Hyun Soo Kim, Kouji Aizawa, Byung Eun Park, Taisuke Furukawa, Hiroshi Ohki, Shin Kikuchi, Hiromasa Hoko, Hiroshi Ishiwara

Research output: Contribution to journalArticlepeer-review


A 1K-bit 1T2C-type ferroelectric memory array has been designed and fabricated by combination of a 0.35 μm gate length CMOS process and a 3 μm design rule ferroelectric process. The write and readout operation in a 1K-bit 1T2C-type memory array cell has been confirmed experimentally.

Original languageEnglish
Pages (from-to)281-286
Number of pages6
JournalIntegrated Ferroelectrics
StatePublished - 2004


  • Cell array
  • Ferroelectric random access memory (FeRAM)
  • Non-destructive readout


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