Fabrication of a Paper Memory Transistor by Using a Solution Process

Paper transistors have the advantages of recyclability, high abundance, low cost, disposability, and biodegradability. In this paper, a nonvolatile transistor fabricated on a paper substrate without protective layers by using solution-based methods is presented, and promising performance is reported. The memory window of ferroelectric field-effect transistors is approximately 16 V when the gate voltage is swept from +20 V to -20 V. The on/off ratio is 3.45 × 10², even on the paper substrate. Electrical characteristics of the memory device are not degraded, as compared with those of transistors on rigid substrates fabricated simultaneously.