Abstract
Paper transistors have the advantages of recyclability, high abundance, low cost, disposability, and biodegradability. In this paper, a nonvolatile transistor fabricated on a paper substrate without protective layers by using solution-based methods is presented, and promising performance is reported. The memory window of ferroelectric field-effect transistors is approximately 16 V when the gate voltage is swept from +20 V to -20 V. The on/off ratio is 3.45 × 102, even on the paper substrate. Electrical characteristics of the memory device are not degraded, as compared with those of transistors on rigid substrates fabricated simultaneously.
Original language | English |
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Pages (from-to) | 1088-1091 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 76 |
Issue number | 12 |
DOIs | |
State | Published - 1 Jun 2020 |
Keywords
- FeFET
- Flexible device
- P(VDF-TrFE)
- P3HT
- Paper
- Sol-gel method