Fabrication of MFIS diodes using BLT(Bi,La)4Ti3O12 and LaAlO3 buffer layers

B. E. Park; H. Ishiwara

Fabrication of MFIS diodes using BLT(Bi,La)₄Ti₃O₁₂ and LaAlO₃ buffer layers

B. E. Park, H. Ishiwara

School of Electrical and Computer Engineering

Tokyo Institute of Technology

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

We fabricated MFIS (metal-ferroelectricinsulator-semiconductor) diodes with Bi_3.35La_0.75Ti₃O₁₂ (BLT) films and lanthanum aluminate (LaAlO₃) buffer layers formed on Si(100) substrates. LaA1O₃films were prepared by an MBE (molecular beam epitaxy) method. After the film deposition, they were subjected to ex site N₂ annealing in a rapid thermal annealing (RTA) furnace at 800 °C for 1 min. BLT films (150 nm) were deposited on these LaAlO₃/Si structures using a sol-gel technique. The memory window of this BLT film annealed in O₂ ambient at 750 °C for 10 min was about 2.7 V. It was found that the leakage current density was on the order of 10^-6 A/cm² at an electric field of 500 kV/cm. It was also found from the retention measurement that the capacitance values biased at a voltage in the hysteresis loop did not change for more than 3 hours.

Original language	English
Pages	163-166
Number of pages	4
State	Published - 2002
Event	Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics - Nara, Japan Duration: 28 May 2002 → 1 Jun 2002

Conference

Conference	Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics
Country/Territory	Japan
City	Nara
Period	28/05/02 → 1/06/02

Cite this

@conference{dabfa8a2b2024bac92262d17345d2150,

title = "Fabrication of MFIS diodes using BLT(Bi,La)4Ti3O12 and LaAlO3 buffer layers",

abstract = "We fabricated MFIS (metal-ferroelectricinsulator-semiconductor) diodes with Bi3.35La0.75Ti3O12 (BLT) films and lanthanum aluminate (LaAlO3) buffer layers formed on Si(100) substrates. LaA1O3films were prepared by an MBE (molecular beam epitaxy) method. After the film deposition, they were subjected to ex site N2 annealing in a rapid thermal annealing (RTA) furnace at 800 °C for 1 min. BLT films (150 nm) were deposited on these LaAlO3/Si structures using a sol-gel technique. The memory window of this BLT film annealed in O2 ambient at 750 °C for 10 min was about 2.7 V. It was found that the leakage current density was on the order of 10-6 A/cm2 at an electric field of 500 kV/cm. It was also found from the retention measurement that the capacitance values biased at a voltage in the hysteresis loop did not change for more than 3 hours.",

author = "Park, {B. E.} and H. Ishiwara",

year = "2002",

language = "English",

pages = "163--166",

note = "Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics ; Conference date: 28-05-2002 Through 01-06-2002",

}

TY - CONF

T1 - Fabrication of MFIS diodes using BLT(Bi,La)4Ti3O12 and LaAlO3 buffer layers

AU - Park, B. E.

AU - Ishiwara, H.

PY - 2002

Y1 - 2002

N2 - We fabricated MFIS (metal-ferroelectricinsulator-semiconductor) diodes with Bi3.35La0.75Ti3O12 (BLT) films and lanthanum aluminate (LaAlO3) buffer layers formed on Si(100) substrates. LaA1O3films were prepared by an MBE (molecular beam epitaxy) method. After the film deposition, they were subjected to ex site N2 annealing in a rapid thermal annealing (RTA) furnace at 800 °C for 1 min. BLT films (150 nm) were deposited on these LaAlO3/Si structures using a sol-gel technique. The memory window of this BLT film annealed in O2 ambient at 750 °C for 10 min was about 2.7 V. It was found that the leakage current density was on the order of 10-6 A/cm2 at an electric field of 500 kV/cm. It was also found from the retention measurement that the capacitance values biased at a voltage in the hysteresis loop did not change for more than 3 hours.

AB - We fabricated MFIS (metal-ferroelectricinsulator-semiconductor) diodes with Bi3.35La0.75Ti3O12 (BLT) films and lanthanum aluminate (LaAlO3) buffer layers formed on Si(100) substrates. LaA1O3films were prepared by an MBE (molecular beam epitaxy) method. After the film deposition, they were subjected to ex site N2 annealing in a rapid thermal annealing (RTA) furnace at 800 °C for 1 min. BLT films (150 nm) were deposited on these LaAlO3/Si structures using a sol-gel technique. The memory window of this BLT film annealed in O2 ambient at 750 °C for 10 min was about 2.7 V. It was found that the leakage current density was on the order of 10-6 A/cm2 at an electric field of 500 kV/cm. It was also found from the retention measurement that the capacitance values biased at a voltage in the hysteresis loop did not change for more than 3 hours.

UR - http://www.scopus.com/inward/record.url?scp=0038608217&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0038608217

SP - 163

EP - 166

T2 - Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics

Y2 - 28 May 2002 through 1 June 2002

ER -

Fabrication of MFIS diodes using BLT(Bi,La)₄Ti₃O₁₂ and LaAlO₃ buffer layers

Abstract

Conference

Other files and links

Fingerprint

Cite this