Fabrication of Novel TFT LCD Panels with High Aperture Ratio Using a-SiCO: H Films as a Passivation Layer

W. S. Hong; K. W. Jung; B. K. Hwang; G. Carny; S. H. Yang; J. H. Choi; K. Chung

doi:10.1557/proc-762-a21.3

Fabrication of Novel TFT LCD Panels with High Aperture Ratio Using a-SiCO: H Films as a Passivation Layer

W. S. Hong, K. W. Jung, B. K. Hwang, G. Carny, S. H. Yang, J. H. Choi, K. Chung

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Fabrication of a novel TFT-LCD panel, using amorphous silicon oxycarbide (a-SiCO:H) films as a passivation layer, was successfully demonstrated for the first time. The a-SiCO:H low-k films were deposited using a standard PECVD (plasma-enhanced chemical vapor deposition) reactor from a gas mixture of trimethylsilane[Si(CH₃)₃H] and N₂O. The resulting firms have a dielectric constant between 2.7 and 3.5 and high optical transmittance in the range of visible light The transfer characteristics of the TFT's having a-SiCO:H as a passivation layer were comparable with that of a conventional TFT with a PECVD-grown SiN_x passivation layer. Stability of the resulting TFT was performed under prolonged bias conditions, and the source-drain current was fairly constant over the test period. The LCD panel with the a-SiCO:H passivation layer showed 30% higher brightness than that of the standard panel.

Original language	English
Pages (from-to)	265-270
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	762
DOIs	https://doi.org/10.1557/proc-762-a21.3
State	Published - 2003
Event	Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003

Access to Document

10.1557/proc-762-a21.3

Cite this

@article{3f71a79f64d84388b01a5cf8782efeac,

title = "Fabrication of Novel TFT LCD Panels with High Aperture Ratio Using a-SiCO: H Films as a Passivation Layer",

abstract = "Fabrication of a novel TFT-LCD panel, using amorphous silicon oxycarbide (a-SiCO:H) films as a passivation layer, was successfully demonstrated for the first time. The a-SiCO:H low-k films were deposited using a standard PECVD (plasma-enhanced chemical vapor deposition) reactor from a gas mixture of trimethylsilane[Si(CH3)3H] and N2O. The resulting firms have a dielectric constant between 2.7 and 3.5 and high optical transmittance in the range of visible light The transfer characteristics of the TFT's having a-SiCO:H as a passivation layer were comparable with that of a conventional TFT with a PECVD-grown SiNx passivation layer. Stability of the resulting TFT was performed under prolonged bias conditions, and the source-drain current was fairly constant over the test period. The LCD panel with the a-SiCO:H passivation layer showed 30\% higher brightness than that of the standard panel.",

author = "Hong, \{W. S.\} and Jung, \{K. W.\} and Hwang, \{B. K.\} and G. Carny and Yang, \{S. H.\} and Choi, \{J. H.\} and K. Chung",

year = "2003",

doi = "10.1557/proc-762-a21.3",

language = "English",

volume = "762",

pages = "265--270",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003 ; Conference date: 22-04-2003 Through 25-04-2003",

}

TY - JOUR

T1 - Fabrication of Novel TFT LCD Panels with High Aperture Ratio Using a-SiCO

T2 - Materials Research Proceedings: Amorphous and Nanocrystalline Silicon-Based Films - 2003

AU - Hong, W. S.

AU - Jung, K. W.

AU - Hwang, B. K.

AU - Carny, G.

AU - Yang, S. H.

AU - Choi, J. H.

AU - Chung, K.

PY - 2003

Y1 - 2003

N2 - Fabrication of a novel TFT-LCD panel, using amorphous silicon oxycarbide (a-SiCO:H) films as a passivation layer, was successfully demonstrated for the first time. The a-SiCO:H low-k films were deposited using a standard PECVD (plasma-enhanced chemical vapor deposition) reactor from a gas mixture of trimethylsilane[Si(CH3)3H] and N2O. The resulting firms have a dielectric constant between 2.7 and 3.5 and high optical transmittance in the range of visible light The transfer characteristics of the TFT's having a-SiCO:H as a passivation layer were comparable with that of a conventional TFT with a PECVD-grown SiNx passivation layer. Stability of the resulting TFT was performed under prolonged bias conditions, and the source-drain current was fairly constant over the test period. The LCD panel with the a-SiCO:H passivation layer showed 30% higher brightness than that of the standard panel.

AB - Fabrication of a novel TFT-LCD panel, using amorphous silicon oxycarbide (a-SiCO:H) films as a passivation layer, was successfully demonstrated for the first time. The a-SiCO:H low-k films were deposited using a standard PECVD (plasma-enhanced chemical vapor deposition) reactor from a gas mixture of trimethylsilane[Si(CH3)3H] and N2O. The resulting firms have a dielectric constant between 2.7 and 3.5 and high optical transmittance in the range of visible light The transfer characteristics of the TFT's having a-SiCO:H as a passivation layer were comparable with that of a conventional TFT with a PECVD-grown SiNx passivation layer. Stability of the resulting TFT was performed under prolonged bias conditions, and the source-drain current was fairly constant over the test period. The LCD panel with the a-SiCO:H passivation layer showed 30% higher brightness than that of the standard panel.

UR - https://www.scopus.com/pages/publications/1642459416

U2 - 10.1557/proc-762-a21.3

DO - 10.1557/proc-762-a21.3

M3 - Conference article

AN - SCOPUS:1642459416

SN - 0272-9172

VL - 762

SP - 265

EP - 270

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 22 April 2003 through 25 April 2003

ER -

Fabrication of Novel TFT LCD Panels with High Aperture Ratio Using a-SiCO: H Films as a Passivation Layer

Abstract

Access to Document

Other files and links

Fingerprint

Cite this