Fabrication of PbZrxTi1-x,O3 films on Si structures using Y2O3 buffer layers

Byung Eun Park, Shigeto Shouriki, Eisuke Tokumitsu, Hiroshi Ishiwara

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Lead-zirconate-titanate (PbZrxTi1-xO3:PZT) films were epitaxially grown on Si(111) substrates using Y2O3 buffer layers. Y2O3 layers were prepared in a molecular beam epitaxy (MBE) apparatus with a single electron beam gun, while PZT films were prepared in a vacuum evaporation chamber with both a crucible and an electron beam gun. It was found from in situ RHEED observation that Y2O3 layers grew epitaxially on Si(111) substrates. It was also found from X-ray diffraction analysis that strongly (101)-oriented PZT films grew on the Y2O3/Si(111) structures at a substrate temperature of 700°C. Metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using this structure, and capacitance-voltage (C-V) curves showed a memory window of about 2.6 V, which is considered to be due to the ferroelectric nature of the PZT film.

Original languageEnglish
Pages (from-to)5145-5149
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number9 PART B
StatePublished - Sep 1998


  • Buffer layer
  • C-V characteristics
  • Ferroelectric
  • MFIS (metal-ferroelectric-insulator-semiconductor)
  • PZT (PbZrTiO)
  • Si
  • YO


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