Fabrication of PbZrxTi1-x,O3 films on Si structures using Y2O3 buffer layers

Byung Eun Park; Shigeto Shouriki; Eisuke Tokumitsu; Hiroshi Ishiwara

doi:10.1143/jjap.37.5145

Fabrication of PbZr_xTi_1-x,O₃ films on Si structures using Y₂O₃ buffer layers

Byung Eun Park, Shigeto Shouriki, Eisuke Tokumitsu, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Tokyo Institute of Technology

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

Lead-zirconate-titanate (PbZr_xTi_1-xO₃:PZT) films were epitaxially grown on Si(111) substrates using Y₂O₃ buffer layers. Y₂O₃ layers were prepared in a molecular beam epitaxy (MBE) apparatus with a single electron beam gun, while PZT films were prepared in a vacuum evaporation chamber with both a crucible and an electron beam gun. It was found from in situ RHEED observation that Y₂O₃ layers grew epitaxially on Si(111) substrates. It was also found from X-ray diffraction analysis that strongly (101)-oriented PZT films grew on the Y₂O₃/Si(111) structures at a substrate temperature of 700°C. Metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using this structure, and capacitance-voltage (C-V) curves showed a memory window of about 2.6 V, which is considered to be due to the ferroelectric nature of the PZT film.

Original language	English
Pages (from-to)	5145-5149
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	9 PART B
DOIs	https://doi.org/10.1143/jjap.37.5145
State	Published - Sep 1998

Keywords

Buffer layer
C-V characteristics
Ferroelectric
MFIS (metal-ferroelectric-insulator-semiconductor)
PZT (PbZrTiO)
Si
YO

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title = "Fabrication of PbZrxTi1-x,O3 films on Si structures using Y2O3 buffer layers",

abstract = "Lead-zirconate-titanate (PbZrxTi1-xO3:PZT) films were epitaxially grown on Si(111) substrates using Y2O3 buffer layers. Y2O3 layers were prepared in a molecular beam epitaxy (MBE) apparatus with a single electron beam gun, while PZT films were prepared in a vacuum evaporation chamber with both a crucible and an electron beam gun. It was found from in situ RHEED observation that Y2O3 layers grew epitaxially on Si(111) substrates. It was also found from X-ray diffraction analysis that strongly (101)-oriented PZT films grew on the Y2O3/Si(111) structures at a substrate temperature of 700°C. Metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using this structure, and capacitance-voltage (C-V) curves showed a memory window of about 2.6 V, which is considered to be due to the ferroelectric nature of the PZT film.",

keywords = "Buffer layer, C-V characteristics, Ferroelectric, MFIS (metal-ferroelectric-insulator-semiconductor), PZT (PbZrTiO), Si, YO",

author = "Park, {Byung Eun} and Shigeto Shouriki and Eisuke Tokumitsu and Hiroshi Ishiwara",

year = "1998",

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doi = "10.1143/jjap.37.5145",

language = "English",

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T1 - Fabrication of PbZrxTi1-x,O3 films on Si structures using Y2O3 buffer layers

AU - Park, Byung Eun

AU - Shouriki, Shigeto

AU - Tokumitsu, Eisuke

AU - Ishiwara, Hiroshi

PY - 1998/9

Y1 - 1998/9

N2 - Lead-zirconate-titanate (PbZrxTi1-xO3:PZT) films were epitaxially grown on Si(111) substrates using Y2O3 buffer layers. Y2O3 layers were prepared in a molecular beam epitaxy (MBE) apparatus with a single electron beam gun, while PZT films were prepared in a vacuum evaporation chamber with both a crucible and an electron beam gun. It was found from in situ RHEED observation that Y2O3 layers grew epitaxially on Si(111) substrates. It was also found from X-ray diffraction analysis that strongly (101)-oriented PZT films grew on the Y2O3/Si(111) structures at a substrate temperature of 700°C. Metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using this structure, and capacitance-voltage (C-V) curves showed a memory window of about 2.6 V, which is considered to be due to the ferroelectric nature of the PZT film.

AB - Lead-zirconate-titanate (PbZrxTi1-xO3:PZT) films were epitaxially grown on Si(111) substrates using Y2O3 buffer layers. Y2O3 layers were prepared in a molecular beam epitaxy (MBE) apparatus with a single electron beam gun, while PZT films were prepared in a vacuum evaporation chamber with both a crucible and an electron beam gun. It was found from in situ RHEED observation that Y2O3 layers grew epitaxially on Si(111) substrates. It was also found from X-ray diffraction analysis that strongly (101)-oriented PZT films grew on the Y2O3/Si(111) structures at a substrate temperature of 700°C. Metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using this structure, and capacitance-voltage (C-V) curves showed a memory window of about 2.6 V, which is considered to be due to the ferroelectric nature of the PZT film.

KW - Buffer layer

KW - C-V characteristics

KW - Ferroelectric

KW - MFIS (metal-ferroelectric-insulator-semiconductor)

KW - PZT (PbZrTiO)

KW - Si

KW - YO

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DO - 10.1143/jjap.37.5145

M3 - Article

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SN - 0021-4922

VL - 37

SP - 5145

EP - 5149

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 9 PART B

ER -

Fabrication of PbZr_xTi_1-x,O₃ films on Si structures using Y₂O₃ buffer layers

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Keywords

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