Fabrication of poly(Vinylidene Fluoride/Trifluorothylene) thin films on si substrates using polyvinyl alcohol buffer layers

The characteristics of a metal-ferroelectric-insulator-semiconductor structure were investigated using poly(vinylidene fluoride/trifluorethylene)(65/ 35) as a ferroelectric layer and polyvinyl alcohol as an insulating buffer layer. It was found in the metal-insulator-semiconductor structure that the polyvinyl alcohol obtained from 0.4 wt.% solution gave excellent insulator results with a bias sweep range of ± 5 V. The leakage current densities of the polyvinyl alcohol films obtained from 0.1, 0.4 and 0.7 wt.% solutions amounted to 10^-5 A/cm², 10^-6 A/cm² and 10^-7 A/cm², respectively. Based on these results, the 0.4 wt.% polyvinyl alcohol solution was selected for use in the metal-ferroelectric-insulator-semiconductor structures. The width of the memory window in the metal-ferroelectric-semiconductor and metal-ferroelectric- insulator-semiconductor structures measured at a voltage sweep of ±5 V was 2 V and 3 V respectively, whereas the respective current densities amounted to 10^-5 and 10^-6 A/cm² at 5V. © 2014