Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

S. K. Jung; S. W. Hwang; D. Ahn; J. H. Park; Yong Kim; E. K. Kim

doi:10.1016/S1386-9477(99)00355-0

Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

S. K. Jung, S. W. Hwang, D. Ahn, J. H. Park, Yong Kim, E. K. Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.

Original language	English
Pages (from-to)	430-434
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/S1386-9477(99)00355-0
State	Published - May 2000
Event	MSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn Duration: 12 Jul 1999 → 16 Jul 1999

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title = "Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot",

abstract = "We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.",

author = "Jung, {S. K.} and Hwang, {S. W.} and D. Ahn and Park, {J. H.} and Yong Kim and Kim, {E. K.}",

year = "2000",

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doi = "10.1016/S1386-9477(99)00355-0",

language = "English",

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note = "MSS9: The 9th International Conference on Modulated Semiconductor Structures ; Conference date: 12-07-1999 Through 16-07-1999",

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T1 - Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

AU - Jung, S. K.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Park, J. H.

AU - Kim, Yong

AU - Kim, E. K.

PY - 2000/5

Y1 - 2000/5

N2 - We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.

AB - We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.

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U2 - 10.1016/S1386-9477(99)00355-0

DO - 10.1016/S1386-9477(99)00355-0

M3 - Conference article

AN - SCOPUS:0033723057

SN - 1386-9477

VL - 7

SP - 430

EP - 434

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3

T2 - MSS9: The 9th International Conference on Modulated Semiconductor Structures

Y2 - 12 July 1999 through 16 July 1999

ER -

Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

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