Far-infrared study of substrate-effect on large scale graphene

Joo Youn Kim; Chul Lee; Sukang Bae; Keun Soo Kim; Byung Hee Hong; E. J. Choi

doi:10.1063/1.3590773

Far-infrared study of substrate-effect on large scale graphene

Joo Youn Kim, Chul Lee, Sukang Bae, Keun Soo Kim, Byung Hee Hong, E. J. Choi

Department of Physics

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

From far-IR Drude absorption measurement we determine carrier density (N) and carrier scattering rate (F) of graphene deposited on buffer-layer/ SiO ₂ composite substrate. Two types of buffer-layers, (1) polar dielectric oxide ZnO and SrTiO₃ (2) organic thin film hexamethyldisilazane and polymethyl methacrylate (PMMA) were studied. N varies widely over 0.12-11.8 (× 1012 cm^-2) range depending on the buffer-layer. In contrast remains almost constant, ∼100 cm^-1, irrespective of the buffer-layers. This indicates that carrier mobility (μ) of graphene depends on substrate through N, but not by as commonly believed.

Original language	English
Article number	201907
Journal	Applied Physics Letters
Volume	98
Issue number	20
DOIs	https://doi.org/10.1063/1.3590773
State	Published - 16 May 2011

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title = "Far-infrared study of substrate-effect on large scale graphene",

abstract = "From far-IR Drude absorption measurement we determine carrier density (N) and carrier scattering rate (F) of graphene deposited on buffer-layer/ SiO 2 composite substrate. Two types of buffer-layers, (1) polar dielectric oxide ZnO and SrTiO3 (2) organic thin film hexamethyldisilazane and polymethyl methacrylate (PMMA) were studied. N varies widely over 0.12-11.8 (× 1012 cm-2) range depending on the buffer-layer. In contrast remains almost constant, ∼100 cm-1, irrespective of the buffer-layers. This indicates that carrier mobility (μ) of graphene depends on substrate through N, but not by as commonly believed.",

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AU - Lee, Chul

AU - Bae, Sukang

AU - Kim, Keun Soo

AU - Hong, Byung Hee

AU - Choi, E. J.

PY - 2011/5/16

Y1 - 2011/5/16

N2 - From far-IR Drude absorption measurement we determine carrier density (N) and carrier scattering rate (F) of graphene deposited on buffer-layer/ SiO 2 composite substrate. Two types of buffer-layers, (1) polar dielectric oxide ZnO and SrTiO3 (2) organic thin film hexamethyldisilazane and polymethyl methacrylate (PMMA) were studied. N varies widely over 0.12-11.8 (× 1012 cm-2) range depending on the buffer-layer. In contrast remains almost constant, ∼100 cm-1, irrespective of the buffer-layers. This indicates that carrier mobility (μ) of graphene depends on substrate through N, but not by as commonly believed.

AB - From far-IR Drude absorption measurement we determine carrier density (N) and carrier scattering rate (F) of graphene deposited on buffer-layer/ SiO 2 composite substrate. Two types of buffer-layers, (1) polar dielectric oxide ZnO and SrTiO3 (2) organic thin film hexamethyldisilazane and polymethyl methacrylate (PMMA) were studied. N varies widely over 0.12-11.8 (× 1012 cm-2) range depending on the buffer-layer. In contrast remains almost constant, ∼100 cm-1, irrespective of the buffer-layers. This indicates that carrier mobility (μ) of graphene depends on substrate through N, but not by as commonly believed.

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Far-infrared study of substrate-effect on large scale graphene

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