Far-infrared study of substrate-effect on large scale graphene

Joo Youn Kim, Chul Lee, Sukang Bae, Keun Soo Kim, Byung Hee Hong, E. J. Choi

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From far-IR Drude absorption measurement we determine carrier density (N) and carrier scattering rate (F) of graphene deposited on buffer-layer/ SiO 2 composite substrate. Two types of buffer-layers, (1) polar dielectric oxide ZnO and SrTiO3 (2) organic thin film hexamethyldisilazane and polymethyl methacrylate (PMMA) were studied. N varies widely over 0.12-11.8 (× 1012 cm-2) range depending on the buffer-layer. In contrast remains almost constant, ∼100 cm-1, irrespective of the buffer-layers. This indicates that carrier mobility (μ) of graphene depends on substrate through N, but not by as commonly believed.

Original languageEnglish
Article number201907
JournalApplied Physics Letters
Issue number20
StatePublished - 16 May 2011


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