Abstract
Coupled-oscillatory networks are an emerging paradigm for efficiently solving optimization problems. In this work, we demonstrate the application of ferroelectric field-effect transistor (FeFET) for energy-efficient coupled-oscillatory networks. A CMOS-compatible FeFET was fabricated having > 1V of hysteresis window and 57 mV/dec of minimum subthreshold swing. With our proposed FeFET oscillator circuits and optimized biasing schemes, a $2\times $ wider synchronization range and up to $276\times $ lower energy per cycle were achieved compared to previous FeFET-based oscillators. Moreover, we employ FeFET coupled-oscillatory network for an edge detection task. Our simulations considering FeFET non-idealities and process variations with a 5-bit quantized image show that the edge detection output closely follows the ideal output.
Original language | English |
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Pages (from-to) | 1670-1673 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 42 |
Issue number | 11 |
DOIs | |
State | Published - 1 Nov 2021 |
Keywords
- CMOS compatible oscillator
- FeFET
- FeFET coupled-oscillatory network
- Ferroelectric
- HZO
- synchronization