TY - JOUR
T1 - Ferroelectric polarization aided low voltage operation of 3d nand flash memories
AU - Ham, Ilsik
AU - Jeong, Youngseok
AU - Baik, Seung Jae
AU - Kang, Myounggon
N1 - Publisher Copyright:
© 2020 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/1
Y1 - 2021/1
N2 - In this paper, we proposed a novel structure enabling the low voltage operation of three-dimensional (3D) NAND flash memory. The proposed structure has a ferroelectric thin film just beneath the control gate, where the inserted ferroelectric material is assumed to have two stable polarization states. A voltage for ferroelectric polarization (VPF ) that is lower than the program or erase voltage is used to toggle the polarization state of the ferroelectric thin film, whose impact on the channel potential profile is analyzed to optimize operation voltage reduction. The channel potential of select word line (WL), where the natural local self-boosting (NLSB) effect occurs, increases due to the polarization state. Model parameters for the ferroelectric thin film of 8 nm are fixed to 15 µC/cm2 for remanent polarization (Pr ), 30 µC/cm2 for saturation polarization (Ps ), and 2 MV/cm for coercive field (Ec ). Within our simulation conditions, a program voltage (VPGM) reduction from 18 V to 14 V is obtained.
AB - In this paper, we proposed a novel structure enabling the low voltage operation of three-dimensional (3D) NAND flash memory. The proposed structure has a ferroelectric thin film just beneath the control gate, where the inserted ferroelectric material is assumed to have two stable polarization states. A voltage for ferroelectric polarization (VPF ) that is lower than the program or erase voltage is used to toggle the polarization state of the ferroelectric thin film, whose impact on the channel potential profile is analyzed to optimize operation voltage reduction. The channel potential of select word line (WL), where the natural local self-boosting (NLSB) effect occurs, increases due to the polarization state. Model parameters for the ferroelectric thin film of 8 nm are fixed to 15 µC/cm2 for remanent polarization (Pr ), 30 µC/cm2 for saturation polarization (Ps ), and 2 MV/cm for coercive field (Ec ). Within our simulation conditions, a program voltage (VPGM) reduction from 18 V to 14 V is obtained.
KW - 3D NAND flash memory
KW - Ferroelectric
KW - Natural local self-boosting (NLSB)
KW - Program voltage for ferroelectric polarization (V )
UR - http://www.scopus.com/inward/record.url?scp=85098594946&partnerID=8YFLogxK
U2 - 10.3390/electronics10010038
DO - 10.3390/electronics10010038
M3 - Article
AN - SCOPUS:85098594946
SN - 2079-9292
VL - 10
SP - 1
EP - 6
JO - Electronics (Switzerland)
JF - Electronics (Switzerland)
IS - 1
M1 - 38
ER -