Ferroelectric properties of SrBi₂Ta₂O₉ thin films on Si (100) with a LaZrO _x buffer layer

To obtain a metal-ferroelectric-insulator-semiconductor (MFIS) structure, we fabricated ferroelectric SrBi₂Ta₂O₉ (SBT) film on a p-type Si (100) wafer with a LaZrO _x (LZO) buffer layer by means of a sol-gel technique. The sol-gel deposited LZO film according to the different annealing temperatures had a good surface morphology even though the crystalline phase was not an amorphous phase. In particular, the root-mean-squared (RMS) surface roughness of the 750-°C-annealed LZO film was about 0.365 nm and its leakage current density was about 8.2∈×∈10^-7 A/cm² at 10 V. A Au/SBT/LZO/Si structure with different SBT film was fabricated. The C-V characteristics of the Au/SBT/LZO/Si structure showed a clockwise hysteresis loop. The memory window width increased as the SBT film thickness increased. The 600-nm-thick SBT film was crystallized in a polycrystalline phase with a highly preferred (115) orientation. The memory window width of the 600-nm-thick SBT film was about 1.94 V at the bias sweep voltage ±9 V and the leakage current density was about 6.48∈×∈10^-8 A/cm² at 10 V.