Ferroelectric properties of SrBi2Ta2O9 thin films on Si (100) with a LaZrO x buffer layer

Jong Hyun Im, Ho Seung Jeon, Joo Nam Kim, Dong Won Kim, Byung Eun Park, Chul Ju Kim

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2 Scopus citations


To obtain a metal-ferroelectric-insulator-semiconductor (MFIS) structure, we fabricated ferroelectric SrBi2Ta2O9 (SBT) film on a p-type Si (100) wafer with a LaZrO x (LZO) buffer layer by means of a sol-gel technique. The sol-gel deposited LZO film according to the different annealing temperatures had a good surface morphology even though the crystalline phase was not an amorphous phase. In particular, the root-mean-squared (RMS) surface roughness of the 750-°C-annealed LZO film was about 0.365 nm and its leakage current density was about 8.2∈×∈10-7 A/cm2 at 10 V. A Au/SBT/LZO/Si structure with different SBT film was fabricated. The C-V characteristics of the Au/SBT/LZO/Si structure showed a clockwise hysteresis loop. The memory window width increased as the SBT film thickness increased. The 600-nm-thick SBT film was crystallized in a polycrystalline phase with a highly preferred (115) orientation. The memory window width of the 600-nm-thick SBT film was about 1.94 V at the bias sweep voltage ±9 V and the leakage current density was about 6.48∈×∈10-8 A/cm2 at 10 V.

Original languageEnglish
Pages (from-to)276-280
Number of pages5
JournalJournal of Electroceramics
Issue number1-3
StatePublished - Feb 2009


  • LaZrO
  • MFIS
  • Sol-gel
  • SrBiTaO


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